SKM300MLI066T [SEMIKRON]

Trench IGBT Modules; 沟道IGBT模块
SKM300MLI066T
型号: SKM300MLI066T
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Trench IGBT Modules
沟道IGBT模块

晶体 晶体管 功率控制 双极性晶体管 局域网
文件: 总5页 (文件大小:702K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SKM 300 MLI 066 T  
 )*+ꢕ- ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ"  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
ꢍꢐꢈꢅ  
Values  
Units  
ꢕꢖꢉ  
3  )* +ꢕ  
500  
&/0  
)**  
7
7
!
3  (6* +ꢕ  
  )* +ꢕ  
  80 +ꢕ  
!
!
ꢕ9:ꢏ),!ꢕꢆꢂꢃ  
500  
< )0  
5
7
ꢕ9:  
;ꢖꢉ  
ꢚꢈꢍ  
ꢕꢕ  &50 ꢔ= ;ꢖ > (* ꢔ= 3  (*0 +ꢕ  
ꢕꢖꢉ ? 500   
@ꢈ  
®
Inverse Diode  
SEMITRANS 5  
!
3  (*0 +ꢕ  
  )* +ꢕ  
  80 +ꢕ  
&)/  
)((  
7
7
A
Trench IGBT Modules  
!
!
!
A9:ꢏ),!Aꢆꢂꢃ  
/)0  
7
7
A9:  
  (0 ꢃꢈ= ꢎꢐꢒ  ꢈꢊꢆꢅ ꢙꢐꢛꢅ 3  (*0 +ꢕ  
)(00  
Aꢉ:  
Freewheeling Diode  
SKM 300 MLI 066 T  
!
3  (*0 +ꢕ  
  )* +ꢕ  
  80 +ꢕ  
&)/  
)((  
7
7
A
!
!
!
A9:ꢏ),!Aꢆꢂꢃ  
/)0  
7
7
A9:  
Target Data  
  (0 ꢃꢈ= ꢎꢐꢒ  ꢈꢊꢆꢅ ꢙꢐꢛꢅ 3  (*0 +ꢕ  
)(00  
Aꢉ:  
Module  
!
*00  
7
+ꢕ  
+ꢕ  
ꢑꢗ9:ꢉꢘ  
Features  
ꢛ3  
. /0 111 2 (6*  
. /0 111 2 ()*  
)*00  
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ  
ꢋꢌꢅꢆꢍꢎ  ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ  
ꢈꢑꢄ  
ꢊꢈꢂꢒ  
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ  
7ꢕ- ( ꢃꢊꢆ1  
ꢕꢖꢗꢈꢐꢑꢘ  
ꢍꢂꢅ  ꢊꢍꢊꢅꢆꢑ  
!ꢆꢑꢅꢄꢌꢐꢑꢅ" #ꢋꢕ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ  
ꢈꢅꢆꢈꢂꢌ  
 )*+ꢕ- ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ"  
Characteristics  
Symbol Conditions  
IGBT  
ꢍꢐꢈꢅ  
min.  
typ.  
max. Units  
Typical Applications  
$%ꢉ  
& 'ꢅꢛꢅꢒ !ꢆꢛꢅꢌꢑꢅꢌ  
;ꢖꢗꢑꢎꢘ  
;ꢖ  ꢕꢖ- !  /-8 ꢃ7  
*
*-8  
5-*  
!
;ꢖ  0 ꢔ- ꢕꢖ  ꢕꢖꢉ  
ꢕꢖ  0 ꢔ- ;ꢖ  )0   
3  )* +ꢕ  
0-0(*  
ꢃ7  
ꢕꢖꢉ  
Remarks  
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ" ꢑꢂ   
ꢏ()*+ꢕ ꢃꢐ,- ꢌꢅꢍꢂꢃꢃꢅꢆ"ꢅ"   
 ./0112(*0+ꢕ  
!
3  )* +ꢕ  
3  )* +ꢕ  
()00  
(
ꢆ7  
;ꢖꢉ  
ꢕꢖ0  
0-B  
0-8*  
(-8  
3  (*0 +ꢕ  
3  )*+ꢕ  
0-B  
&
ꢂꢚ  
ꢕꢖ  
;ꢖ  (*   
ꢃC  
ꢃC  
3  (*0+ꢕ  
)-6  
&-8  
(-B  
)-(  
ꢕꢖꢗꢈꢐꢑꢘ  
!ꢕꢆꢂꢃ  &00 7- ;ꢖ  (*  3  )*+ꢕꢍꢎꢊꢚꢒꢅꢛ1  
(-/*  
(-6  
3  (*0+ꢕꢍꢎꢊꢚꢒꢅꢛ1  
ꢊꢅꢈ  
(8-/  
(-(/  
ꢆA  
ꢆA  
ꢂꢅꢈ  
ꢕꢖ  )*- ;ꢖ  0   
   ( :ꢁD  
ꢌꢅꢈ  
E;  
0-*/  
&B00  
(
ꢆA  
ꢆꢕ  
F
;ꢖ  .(*ꢔ1112(*ꢔ  
3  +ꢕ  
9;ꢊꢆꢑ  
"ꢗꢂꢆꢘ  
 
ꢂꢆ  
"ꢗꢂ  ꢘ  
(/0  
8B  
ꢆꢈ  
ꢆꢈ  
ꢃH  
ꢆꢈ  
ꢆꢈ  
9;ꢂꢆ  )-) C  
ꢕꢕ  &00ꢔ  
! &007  
"ꢊG"ꢑ  &/00 7G@ꢈ  
9;ꢂ    )-) C  
&-*  
/&&  
((5  
3  ()* +ꢕ  
"ꢊG"ꢑ  &/00 7G@ꢈ  
;ꢖ  
 
..(*ꢔG2(*ꢔ  
ꢂ    
(0-(  
0-)  
ꢃH  
9ꢑꢎꢗ3.ꢍꢘ  
ꢚꢅꢌ !;Iꢋ  
JGK  
MLI-T  
1
21-09-2009 DIL  
© by SEMIKRON  
SKM 300 MLI 066 T  
Characteristics  
Symbol Conditions  
Inverse Diode  
min.  
typ.  
max. Units  
A  ꢖꢕ  
!Aꢆꢂꢃ  )/* 7= ;ꢖ  0   
3  )* +ꢕꢍꢎꢊꢚꢒꢅꢛ1  
3  ()* +ꢕꢍꢎꢊꢚꢒꢅꢛ1  
3  )* +ꢕ  
(-&*  
(-&*  
(
(-5  
(-5  
(-(  
(
A0  
3  ()* +ꢕ  
3  )* +ꢕ  
0-B  
A  
(-/)  
(-8  
)
ꢃC  
ꢃC  
3  ()* +ꢕ  
3  ()* +ꢕ  
)-/  
!
!A  )/* 7  
7
99:  
Eꢌꢌ  
ꢌꢌ  
@ꢕ  
®
;ꢖ  .8 ꢔ= ꢕꢕ  &00   
ꢚꢅꢌ "ꢊꢂ"ꢅ  
ꢃH  
SEMITRANS 5  
9ꢑꢎꢗ3.ꢍꢘL  
0-)8  
JGK  
Free-wheeling diode (Neutral Clamp Diode)  
Trench IGBT Modules  
A  ꢖꢕ  
!Aꢆꢂꢃ  )/* 7= ;ꢖ  0   
3  )* +ꢕꢍꢎꢊꢚꢒꢅꢛ1  
3  ()* +ꢕꢍꢎꢊꢚꢒꢅꢛ1  
3  )* +ꢕ  
(-&*  
(-&*  
(
(-5  
(-5  
(-(  
(
A0  
SKM 300 MLI 066 T  
3  ()* +ꢕ  
3  )* +ꢕ  
0-B  
A  
(-/)  
(-8  
)
3  ()* +ꢕ  
3  ()* +ꢕ  
)-/  
!
!A  &00 7  
(B/  
(&  
7
Target Data  
99:  
Eꢌꢌ  
ꢌꢌ  
"ꢊG"ꢑ  &/00 7G@ꢈ  
@ꢕ  
;ꢖ  0 ꢔ= ꢕꢕ  &00   
/
ꢃH  
JGK  
#ꢃ  
#ꢃ  
Features  
9ꢑꢎꢗ3.ꢍꢘAL  
ꢚꢅꢌ "ꢊꢂ"ꢅ  
0-)8  
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ  
ꢋꢌꢅꢆꢍꢎ  ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ  
:
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆM :5  
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ :5  
&
*
*
:
)-*  
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ  
ꢕꢖꢗꢈꢐꢑꢘ  
&(0  
ꢍꢂꢅ  ꢊꢍꢊꢅꢆꢑ  
!ꢆꢑꢅꢄꢌꢐꢑꢅ" #ꢋꢕ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ  
ꢈꢅꢆꢈꢂꢌ  
Temperature sensor  
9(00  
ꢏ(00+ꢕ ꢗ9)*ꢏ*MCꢘ  
/B&<*N  
C
J
Typical Applications  
$%ꢉ  
& 'ꢅꢛꢅꢒ !ꢆꢛꢅꢌꢑꢅꢌ  
Remarks  
This is an electrostatic discharge sensitive device (ESDS), international standard  
IEC 60747-1, Chapter IX.  
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ" ꢑꢂ   
ꢏ()*+ꢕ ꢃꢐ,- ꢌꢅꢍꢂꢃꢃꢅꢆ"ꢅ"   
ꢂꢚ  
This technical information specifies semiconductor devices but promises no  
characteristics. No warranty or guarantee expressed or implied is made regarding  
delivery, performance or suitability.  
 ./0112(*0+ꢕ  
MLI-T  
2
21-09-2009 DIL  
© by SEMIKRON  
SKM 300 MLI 066 T  
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2 Rated current vs. temperature IC = f (TC)  
Fig. 4 Typ. turn-on /-off energy = f (RG)  
Fig. 6 Typ. gate charge characteristic  
Fig. 3 Typ. turn-on /-off energy = f (IC)  
3
21-09-2009 DIL  
© by SEMIKRON  
SKM 300 MLI 066 T  
Fig. 7 Typ. switching times vs. IC  
Fig. 8 Typ. switching times vs. gate resistor RG  
Fig. 10 CAL diode forward characteristic  
4
21-09-2009 DIL  
© by SEMIKRON  
SKM 300 MLI 066 T  
ꢕꢐꢈꢅ L50  
:'!.ꢋ  
ꢕꢐꢈꢅ L50  
5
21-09-2009 DIL  
© by SEMIKRON  

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