SKM400GA062D [SEMIKRON]
Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, SEMITRANS-9;
| 型号： | SKM400GA062D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, SEMITRANS-9 局域网 电动机控制 栅 晶体管 |
| 文件： | 总6页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMITRANS® M
PT-IGBT Modules
Absolute Maximum Ratings
Symbol Conditions 1)
VCES
Values
Units
V
V
A
A
600
600
475 / 400
950 / 800
± 20
SKM 400 GA 062 D *)
SKM 400 GB 062 D
VCGR
IC
RGE = 20 kΩ
Tcase = 25/60 °C
ICM
Tcase = 25/60 °C; tp = 1 ms
SKM 400 GAL 062 D 6)
SKM 400 GAR 062 D 6)
VGES
Ptot
V
per IGBT, Tcase = 25 °C
1400
–40 ... +150 (125)
2500
W
°C
V
Tj, (Tstg
Visol
)
AC, 1 min.
humidity DIN 40040
Class F
40/125/56
climate
DIN IEC 68 T.1
Inverse Diode; Free Wheeling Diode FWD
IF = –IC
T
case = 25/80 °C
400 / 270
950 / 800
2800
A
A
IFM = –ICM Tcase = 25/80 °C; tp = 1 ms
IFSM
I2t
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
A
SEMITRANS 3
39 000
A2s
Characteristics
Symbol Conditions 1)
6)
min.
typ.
max.
Units
V(BR)CES VGE = 0, IC = 4 mA
≥ VCES
4,5
–
–
5,5
5
25
–
–
6,5
12
–
V
V
mA
mA
µA
V
VGE(th)
ICES
VGE = VCE, IC = 9 mA
VGE = 0 Tj = 25 °C
CE = VCES Tj = 125 °C
6)
GA
GB
GAL
GAR
V
–
–
–
IGES
VGE = 20 V, VCE = 0
1
Features
VCEsat
IC = 400 A VGE = 15 V;
2,3(2,2) 2,55(2,65)
• N channel, epitaxial Silicon
structure (PT- Punch-through
IGBT)
• High short circuit capability, self
limiting, if term. G is clamped to E
• Latch-up free, if clamped as
above
Tj = 25 (125) °C
VCE = 20 V, IC = 400 A
–
80
–
–
–
–
V
S
gfs
CCHC
Cies
Coes
Cres
LCE
per IGBT
–
–
–
–
–
–
700
–
–
–
20
pF
nF
nF
nF
nH
VGE = 0
22
2,5
1,5
–
VCE = 25 V
f = 1 MHz
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (13 mm) and
creepage distances (20 mm)
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 300 V
–
–
–
–
–
–
180
120
600
180
22
–
–
–
–
–
–
ns
ns
ns
ns
mWs
mWs
VGE = –15 V / +15 V3)
IC = 400 A, ind. load
RGon = RGoff = 5 Ω
Tj = 125 °C
40
Inverse Diode and FWD of types „GAL“, „GAR“ 8)
Typical Applications → B6 – 61
VF = VEC IF = 300 A VGE = 0 V;
VF = VEC IF = 400 A Tj = 25 (125) °C
–
–
–
–
–
–
1,5(1,4) 1,65(1,6)
V
V
V
mΩ
A
µC
• Switching (not for linear use)
• Switched mode power supplies
• AC inverter drives
• UPS uninterruptable power
supplies
1,6(1,6)
1,8(1,8)
VTO
rt
IRRM
Qrr
Tj = 125 °C
Tj = 125 °C
–
–
0,9
3
IF = 400 A; Tj = 125 °C2)
IF = 400 A; Tj = 125 °C2)
140
19
–
–
Thermal characteristics
1)
T
= 25 °C, unless otherwise
case
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
–
–
–
–
–
–
0,09
0,15
0,038
°C/W
°C/W
°C/W
specified
2) IF = – IC, VR = 300 V,
–diF/dt = 2000 A/µs, VGE = 0 V
3) Use VGEoff = –5... –15 V
6) The free-wheeling diode of the
GAL and GAR types have the
data of the inverse diodes of
SKM 400 GB 062 D
8) CAL = Controlled Axial Lifetime
Technology
Cases and mech. data → B6 – 62
*)SEMITRANS4 → B6 – 168
© by SEMIKRON
0898
B 6 – 57
SKM 400 GA 062 D ...
M4 0 0GB06 .XLS-1
1600
M4 00 GB06 .XLS-2
90
mWs
Tj = 125 °C
VCE = 300 V
W
1400
80
70
60
50
40
30
20
10
E
off
V
GE = ± 15 V
Ω
1200
1000
800
RG = 5
E
on
600
400
200
P
tot
E
0
0
0
20
40
60
80 100 120 140 160
°C
0
200
400
600
800
1000
A
T
C
I
C
Fig. 1 Rated power dissipation Ptot = f (TC)
Fig. 2 Turn-on /-off energy = f (IC)
M4 00 GB06 .XLS-4
10000
A
M4 0 0GB06 .XLS-3
90
mWs
Tj = 125 °C
VCE = 300 V
1 pulse
TC = 25 °C
≤
Tj 150 °C
E
E
on
off
80
70
60
50
40
30
20
10
0
VGE = ± 15 V
1000
100
10
t =60µs
p
IC = 400 A
100µs
1ms
10ms
I
C
E
1
0
10
20
30
40
50
1
10
100
1000
10000
R
G
Ω
V
CE
V
Fig. 3 Turn-on /-off energy = f (RG)
Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
M4 00 GB06 .XLS-5
M4 00 GB06 .XLS-6
2,5
2
12
≤
Tj 150 °C
≤
Tj 150 °C
V
GE = 15 V
VGE = ± 15 V
Ω
R
Goff = 5
IC = 400 A
10
8
≤
tsc 10 µs
L < 25 nH
IC = 400 A
di/dt= 500 A/µs
1400 A/µs
2500 A/µs
1,5
1
6
allowed numbers of
4
short circuits: <1000
time between short
circuits: >1s
0,5
2
I
/I
C
Cpuls
I
/I
CSC C
0
0
0
100
CE
200
300
400
500
600
700
0
100
200
300
400
500
600
700
V
V
CE
V
V
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit IC = f (VCE)
B 6 – 58
0898
© by SEMIKRON
M 400GB06.XLS-8
500
450
400
350
300
250
200
150
100
50
Tj = 150 °C
VGE ≥ 15V
A
I
C
0
0
20
40
60
80 100 120 140 160
°C
T
C
Fig. 8 Rated current vs. temperature IC = f (TC)
M 400GB06.XLS-9
M 400GB06.XLS-10
800
700
600
500
400
300
200
100
0
800
A
A
700
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
600
500
400
300
200
100
0
7V
7V
I
I
C
C
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
V
V
V
CE
Fig. 9 Typ. output characteristic, tp = 250 µs; 25 °C
Fig. 10 Typ. output characteristic, tp = 250 µs; 125 °C
M400GB06.XLS-12
800
Pcond(t) = VCEsat(t) · IC(t)
A
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)
VCE(TO)(Tj) ≤ 1,3 – 0,003 (Tj –25) [V]
600
400
200
typ.: rCE(Tj) = 0,0025 + 0,000005 (Tj –25) [Ω]
max.: rCE(Tj) = 0,0031 + 0,000010 (Tj –25) [Ω]
IC
+2
valid for VGE = + 15
[V]; IC > 0,3 ICnom
0
–1
0
2
4
6
8
10
12
14
VG
V
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
Fig. 12 Typ. transfer characteristic, tp = 250 µs; VCE = 20 V
0898 B 6 – 59
© by SEMIKRON
SKM 400 GA 062 D ...
M 400GB06.XLS-13
M 400GB06.XLS-14
20
100
nF
ICpuls = 400 A
VGE = 0 V
f = 1 MHz
V
18
C
100V
ies
16
14
12
10
8
300V
10
C
C
oes
1
6
res
4
C
2
V
GE
0
0,1
0
0,4 0,8 1,2
1,6
2
2,4 2,8 3,2
nC
0
10
20
30
V
CE
V
Q
Gate
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.VCE
M 400GB06.XLS-16
M 400GB06.XLS-15
10000
ns
1000
ns
Tj = 125 °C
Tj = 125 °C
V
V
CE = 300 V
GE = ± 15 V
V
V
CE = 300 V
GE = ± 15 V
t
doff
t
doff
R
Gon = 5 Ω
IC = 400 A
induct. load
RGoff = 5 Ω
induct. load
t
don
1000
t
don
t
f
t
r
100
t
f
t
100
r
t
t
10
10
0
10
20
30
40
50
0
200
400
600
800
1000
R
I
G
Ω
C
A
Fig. 15 Typ. switching times vs. IC
Fig. 16 Typ. switching times vs. gate resistor RG
M400GB06.XLS-17
M 400GB06.XLS-18
400
A
4
VR = 300 V
Tj = 125 °C
3 Ω
5 Ω
R =
Tj=125°C, typ.
G
mJ
350
V
GE = ± 15 V
Tj=25°C, typ.
300
3
2
1
10 Ω
250
200
24 Ω
47 Ω
Tj=125°C, max.
150
Tj=25°C, max.
100
50
E
offD
0
IF
0
0
100
200
300
400
500
0
0,4
0,8
1,2
1,6
V
2
A
VF
I
F
Fig. 17 Typ. CAL diode forward characteristic
B 6 – 60
Fig. 18 Diode turn-off energy dissipation per pulse
0898 © by SEMIKRON
M4 0 0GB06 .XLS-19
1
M4 0 0GB06 .XLS-20
1
K/W
K/W
0,1
0,1
0,01
0,01
D=0,50
0,20
0,10
0,05
0,02
D=0,5
0,2
0,1
0,05
0,02
0,01
0,001
0,0001
0,001
0,0001
single pulse
0,01
single pulse
Z
Z
thJC
thJC
0,00001
0,00001
0,00001 0,0001
0,001
0,01
0,1
1
0,00001 0,0001
0,001
0,01
0,1
1
s
t
t
s
p
p
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
M400GB06.XLS-22
M400GB06.XLS-23
250
250
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
IF = 300 A
A
R
=
G
A
3 Ω
R =
3 Ω
G
200
150
100
50
200
5 Ω
5 Ω
10 Ω
24 Ω
47 Ω
10 Ω
150
100
50
24 Ω
47 Ω
I
RR
I
RR
0
0
0
100
200
300
400
500
0
1000
2000
3000
4000
I
F
A
di dt
/
F
A/µs
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
Fig. 23 Typ. CAL diode peak reverse
recovery current IRR = f (di/dt)
M4 0 0GB06 .XLS-24
25
µC
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
3 Ω
I =
F
400 A
R =
G
5 Ω
Typical Applications
include
10 Ω
20
15
10
5
24 Ω
47 Ω
300 A
Switched mode power supplies
DC servo and robot drives
Inverters
200 A
150 A
100 A
DC choppers
AC motor speed control
UPS Uninterruptable power supplies
General power switching applications
Q
rr
0
0
1000
2000
3000
4000
A/µs
di /dt
F
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON
0898
B 6 – 61
SKM 400 GA 062 D ...
SEMITRANS 3
Case D 56
UL Recognized
File no. E 63 532
SKM 400 GB 062 D
Dimensions in mm
SKM 400 GAL 062 D
SKM 400 GAR 062 D
Case D 58 ( D 56)
Case D 57 (
→
D 56)
→
Case outline and circuit diagrams
This is an electrostatic discharge
Mechanical Data
Symbol Conditions
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Values
typ.
Units
min.
max.
M1
M2
to heatsink, SI Units(M6)
to heatsink, US Units
for terminals, SI Units(M6)
for terminals, US Units
3
27
2,5
22
–
–
–
–
–
–
–
5
44
5
44
5x9,81
330
Nm
lb.in.
Nm
lb.in.
m/s2
g
Three devices are supplied in one
SEMIBOX A without mounting
hardware, which can be ordered
separately under Ident No.
33321100 (for 10 SEMITRANS 3).
Larger packing units of 12 and 20
pieces are used if suitable
a
w
–
6) Freewheeling diode
→
B 6 – 57, remark 6.
Accessories
SEMIBOX
→
B 6 - 4.
→
C - 1.
B 6 – 62
0898
© by SEMIKRON
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