SKM313B010 [SEMIKRON]
Power MOSFET Modules; 功率MOSFET模块
| 型号： | SKM313B010 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Power MOSFET Modules |
| 文件： | 总4页 (文件大小：444K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 313B010
0 1 $+ 2ꢂꢈ ꢙꢅꢇꢆꢒꢒ ꢌꢋꢃꢆꢐ,ꢑꢒꢆ ꢒꢕꢆꢉꢑꢗꢑꢆꢍ
Absolute Maximum Ratings
ꢉ
Symbol Conditions
3-ꢓ
Values
!%%
Units
3
ꢔ-
0ꢒ 1 $+ 5%# 2ꢂ
! ꢊꢒ
"6% $6%#
!!8%
ꢎ
ꢔ-7
ꢎ
39ꢓ
0ꢏ;ꢈ 0ꢒꢋꢚ
: $%
3
#
< =% ((( > !+% !$+#
2ꢂ
3ꢑꢒꢌꢇ
ꢎꢂꢈ ! ꢊꢑꢅ(
$+%%
3
Inverse diode
ꢔ? 1 < ꢔꢓ
"5%
ꢎ
ꢎ
TM
SEMITRANS
3
ꢔ?7 1 < ꢔꢓ7
!!=%
0 1 $+ 2ꢂꢈ ꢙꢅꢇꢆꢒꢒ ꢌꢋꢃꢆꢐ,ꢑꢒꢆ ꢒꢕꢆꢉꢑꢗꢑꢆꢍ
Power MOSFET Modules
Characteristics
ꢉ
Symbol Conditions
min.
!%%
typ.
max.
Units
3
3
39ꢓ 1 % 3ꢈ ꢔ- 1 %ꢈ+ ꢊꢎ
@A#-ꢓꢓ
39ꢓ ꢋꢃ#
ꢔ-ꢓꢓ
39ꢓ 1 3-ꢓꢈ ꢔ- 1 + ꢊꢎ
$ꢈ!
"
=
3
SKM 313B010
39ꢓ 1 % 3ꢈ 3-ꢓ 1 !%% 3ꢈ
0; 1 $+ !$+# 2ꢂ
!%%
Bꢎ
ꢔ9ꢓꢓ
39ꢓ 1 $% 3ꢈ 3-ꢓ 1 % 3
39ꢓ 1 !% 3ꢈ ꢔ- 1 "%% ꢎ
!%%%
"ꢈ+
ꢅꢎ
A-ꢓ ꢌꢅ#
"
ꢊC
ꢚꢗꢒ
3-ꢓ 1 $+ 3ꢈ ꢔ- 1 "%% ꢎ
!+%
$%%
ꢓ
Features
ꢂꢂDꢂ
ꢂꢑꢒꢒ
39ꢓ 1 %ꢈ 3-ꢓ 1 $+ 3ꢈ ꢗ 1 ! 7D'
8%%
"$
ꢕ?
ꢅ?
ꢅ?
ꢅ?
ꢁ ꢂꢃꢄꢅꢅꢆꢇꢈ ꢆꢅꢃꢄꢅꢉꢆꢊꢆꢅꢋ ꢊꢌꢍꢆ
ꢎꢏꢄꢇꢄꢅꢉꢃꢆ ꢉꢃꢄꢐꢄꢉꢋꢆꢐꢑꢒꢋꢑꢉꢒ
ꢓꢃꢌꢐꢋ ꢑꢅꢋꢆꢐꢅꢄꢇ ꢉꢌꢅꢅꢆꢉꢋꢑꢌꢅꢒ ꢄꢏꢌꢑꢍ
ꢌꢒꢉꢑꢇꢇꢄꢋꢑꢌꢅꢒ
ꢀ
ꢀ
ꢀ
$=
8ꢈ"
=ꢈ"
ꢂꢌꢒꢒ
ꢂꢐꢒꢒ
!!
*ꢈ+
ꢛ-ꢓ
$%
ꢅD
ꢔꢒꢌꢇꢄꢋꢆꢍ ꢉꢌꢕꢕꢆꢐ ꢖꢄꢒꢆꢕꢇꢄꢋꢆꢒ
ꢎꢇꢇ ꢆꢇꢆꢉꢋꢐꢑꢉꢄꢇ ꢉꢌꢅꢅꢆꢉꢋꢑꢌꢅꢒ ꢌꢅ ꢋꢌꢕ
ꢗꢌꢐ ꢆꢄꢒꢘ ꢖꢙꢒꢖꢄꢐꢑꢅꢚ
ꢀ
ꢀ
ꢋꢍ ꢌꢅ#
ꢋꢐ
3-- 1 "% 3ꢈ ꢔ- 1 $+% ꢎꢈ
!%%
!%%
8%%
ꢅꢒ
ꢅꢒ
ꢅꢒ
39ꢓ 1 1 : !% 3ꢈ A9 1 =ꢈ8 C
ꢋꢍ ꢌꢗꢗ#
ꢛꢄꢐꢚꢆ ꢉꢇꢆꢄꢐꢄꢅꢉꢆ !"ꢊꢊ# ꢄꢅꢍ
ꢉꢐꢆꢆꢕꢄꢚꢆ ꢍꢑꢒꢋꢄꢅꢉꢆꢒ $%ꢊꢊ#
ꢀ
ꢋꢗ
$+%
ꢅꢒ
Inverse diode
&ꢛ ꢐꢆꢉꢌꢚꢅꢑ'ꢆꢍꢈ ꢗꢑꢇꢆ ꢅꢌ( ) *" +"$
ꢀ
3ꢓ-
ꢔ? 1 "%% ꢎE 39ꢓ 1 % 3
!ꢈ$
!*%
!%
!ꢈ+
3
ꢋꢐꢐ
0; 1 $+ !+%# 2ꢂ
0; 1 $+ 2ꢂ
ꢅꢒ
Bꢂ
Typical Applications
ꢓ,ꢑꢋꢉꢃꢆꢍ ꢊꢌꢍꢆ ꢕꢌ,ꢆꢐ ꢒꢙꢕꢕꢇꢑꢆꢒ
-ꢂ ꢒꢆꢐꢏꢌ ꢄꢅꢍ ꢐꢌꢖꢌꢋ ꢍꢐꢑꢏꢆꢒ
-ꢂ ꢉꢃꢌꢕꢕꢆꢐꢒ
&.ꢓ ꢆ/ꢙꢑꢕꢊꢆꢅꢋ
.ꢇꢄꢒꢊꢄ ꢉꢙꢋꢋꢑꢅꢚ
ꢁꢌꢋ ꢒꢙꢑꢋꢄꢖꢇꢆ ꢗꢌꢐ ꢇꢑꢅꢆꢄꢐ
ꢄꢊꢕꢇꢑꢗꢑꢉꢄꢋꢑꢌꢅ
Fꢐꢐ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢔꢐꢐ
0; 1 2ꢂ
ꢎ
Thermal characteristics
Aꢋꢃ ;<ꢉ#
ꢕꢆꢐ 7Gꢓ?)0
%ꢈ!$
HIJ
HIJ
Aꢋꢃ ꢉ<ꢒ#
7ꢒꢈ ꢒꢙꢐꢗꢄꢉꢆ !% Kꢊꢈ ꢕꢆꢐ ꢊꢌꢍꢙꢇꢆ
%ꢈ%"5
Mechanical data
7ꢒ
ꢋꢌ ꢃꢆꢄꢋꢒꢑꢅL 7*#
=
+
+
ꢁꢊ
ꢁꢊ
7ꢋ
ꢗꢌꢐ ꢋꢆꢐꢊꢑꢅꢄꢇꢒ 7+#
$ꢈ+
,
"$+
ꢚ
MB
1
05-04-2005 SEN
© by SEMIKRON
SKM 313B010
Fig. 1 Rated power dissipation vs. temperature
Fig. 2 Maximum safe operating area
Fig. 3 Output characteristic
Fig. 4 Transfer characteristic
Fig. 5 On-resistance vs. temperature
Fig. 6 Rated current vs. temperature
2
05-04-2005 SEN
© by SEMIKRON
SKM 313B010
Fig. 7 Breakdown voltage vs. temperature
Fig. 8 Drain-source voltage derating
Fig. 9 Capacitances vs. drain-source voltage
Fig. 10 Gate charge characteristic
3
05-04-2005 SEN
© by SEMIKRON
SKM 313B010
UL Recognized
Dimensions in mm
File no. E 63 532
ꢂꢄꢒꢆ -+*
ꢂꢄꢒꢆ - +*
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
05-04-2005 SEN
© by SEMIKRON
相关型号：
SKM400GA062D
Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, SEMITRANS-9
SEMIKRON
©2020 ICPDF网 联系我们和版权申明