SK25GD126ET_07 [SEMIKRON]
IGBT Module; IGBT模块型号: | SK25GD126ET_07 |
厂家: | SEMIKRON INTERNATIONAL |
描述: | IGBT Module |
文件: | 总5页 (文件大小:688K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SK25GD126ET
# , -. /ꢁ0 ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
1ꢁ23
#4 , -. /ꢁ
6-77
8-
1
'
'
%
#4 , 6.7 /ꢁ
#ꢊ , -. /ꢁ
#ꢊ , 97 /ꢁ
ꢁ
-8
%
%
ꢁ:;, - ꢗ %ꢁꢍꢂꢃ
.7
< -7
67
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1
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1&23
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®
1ꢁꢁ , =77 1> 1&2 ? -7 1> #4 , 6-. /ꢁ
1ꢁ23 @ 6-77 1
Aꢊ
SEMITOP 3
Inverse Diode
IGBT Module
%
#4 , 6.7 /ꢁ
#ꢊ , -. /ꢁ
#ꢊ , 97 /ꢁ
-9
6B
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)
%
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SK25GD126ET
Module
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/ꢁ
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#
CD7 EEE F6.7
CD7 EEE F6-.
-.77
+4
Preliminary Data
#
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'ꢁ0 6 ꢃꢋꢍE
Features
# , -. /ꢁ0 ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
min.
typ.
max. Units
1&2ꢘꢇꢕꢛ
1&2 , 1ꢁ20 %ꢁ , 6 ꢃ'
.
.09
=0.
1
ꢃ'
ꢃ'
ꢍ'
ꢍ'
1
%
1&2 , 7 10 1ꢁ2 , 1ꢁ23
1ꢁ2 , 7 10 1&2 , -7 1
#4 , -. /ꢁ
706.
ꢁ23
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ꢁ'( ꢇꢉꢆꢕꢍꢂꢔꢂꢌ$ )*ꢙ
%ꢍꢇꢉꢌꢏꢅꢇꢉꢈ !#ꢁ ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ
ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
#4 , 6-. /ꢁ
#4 , -. /ꢁ
%
=77
60-
8=
&23
#4 , 6-. /ꢁ
#4 , -. /ꢁ
1ꢁ27
6
Typical Applications
#4 , 6-. /ꢁ
#4 , -./ꢁ
70B
-9
1
%ꢍ+ꢉꢏꢇꢉꢏ
ꢏꢁ2
1&2 , 6. 1
ꢃG
ꢃG
1
ꢀ
#4 , 6-./ꢁ
#4 , -./ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , 6-./ꢁꢆꢕꢋꢄꢔꢉ+E
DD
1ꢁ2ꢘꢊꢅꢇꢛ
%ꢁꢍꢂꢃ , -. '0 1&2 , 6. 1
60H
-0-
-06
1
ꢁꢋꢉꢊ
609
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ꢁꢂꢉꢊ
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707B.
ꢁꢏꢉꢊ
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9.
87
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ꢍꢊ
ꢃJ
ꢍꢊ
ꢍꢊ
:
&ꢂꢍ , -. G
&ꢂꢓꢓ , -. G
1ꢁꢁ , =771
2ꢂꢍ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
%ꢁꢍꢂꢃ, -.'
808
D87
B7
:
#4 , 6-. /ꢁ
1&2,<6.1
2ꢂꢓꢓ
806
ꢃJ
:
ꢄꢉꢏ %&ꢚ#
60-
KL*
ꢇꢕꢘ4Cꢊꢛ
GD-ET
1
21-02-2007 SCT
© by SEMIKRON
SK25GD126ET
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
1) , 12ꢁ
%)ꢍꢂꢃ , -. '> 1&2 , 7 1
#4 , -. /ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , 6-. /ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , -. /ꢁ
609
609
6
1
1
1)7
606
D-
1
#4 , 6-. /ꢁ
#4 , -. /ꢁ
709
8-
D7
1
ꢏ)
ꢃG
ꢃG
#4 , 6-. /ꢁ
#4 , 6-. /ꢁ
®
%
%)ꢍꢂꢃ , -. '
86
.
'
SEMITOP 3
::;
Mꢏꢏ
2ꢏꢏ
ꢈꢋLꢈꢇ , CB.7 'LAꢊ
1ꢁꢁ, =771
Aꢁ
-06
ꢃJ
KL*
!ꢃ
ꢌ
IGBT Module
:
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
60B
-0.
ꢇꢕꢘ4Cꢊꢛꢙ
;
ꢇꢂ ꢕꢉꢅꢇ ꢊꢋꢍN
-0-.
ꢊ
ꢐ
87
SK25GD126ET
Temperature sensor
:
#ꢊ ,677/ꢁ ꢘ:-.,.NGꢛ
DB8<.O
G
677
Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢔꢇꢏꢅꢓꢅꢊꢇ !"# ꢇꢉꢆꢕꢍꢂꢔꢂꢌ$ %&ꢚ#
ꢁ'( ꢇꢉꢆꢕꢍꢂꢔꢂꢌ$ )*ꢙ
%ꢍꢇꢉꢌꢏꢅꢇꢉꢈ !#ꢁ ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ
ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
Typical Applications
%ꢍ+ꢉꢏꢇꢉꢏ
ꢀ
GD-ET
2
21-02-2007 SCT
© by SEMIKRON
SK25GD126ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-02-2007 SCT
© by SEMIKRON
SK25GD126ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-02-2007 SCT
© by SEMIKRON
SK25GD126ET
UL recognized file
no. E 63 532
ꢁꢅꢊꢉ #.- ꢘ3ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ0 ꢋꢍ ꢇꢕꢉ "ꢁꢚ0 ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊP -ꢃꢃꢛ
ꢁꢅꢊꢉ # .-
&ꢙC2#
5
21-02-2007 SCT
© by SEMIKRON
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