SK25GH063_06 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK25GH063_06 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总4页 (文件大小：585K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 25 GH 063
# 3 0/ 4ꢁ* ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
ꢊ
Values
Units
IGBT
5ꢁ,1
5%,1
-66
5
5
<
<
7 06
$
$
#ꢊ 3 0/ ꢘ96ꢛ 4ꢁ:
.6 ꢘ0;ꢛ
-6 ꢘ?0ꢛ
ꢁ
ꢇꢄ > ; ꢃꢊ: #ꢊ 3 0/ ꢘ96ꢛ 4ꢁ:
ꢁ=
#
! ?6 +++ A ;/6
4ꢁ
@
Inverse/Freewheeling CAL diode
$
#ꢊ 3 0/ ꢘ96ꢛ 4ꢁ:
.- ꢘ0?ꢛ
C0 ꢘ?9ꢛ
<
<
B
®
$B= 3 ! $ꢁ=
ꢇꢄ > ; ꢃꢊ: #ꢊ 3 0/ ꢘ96ꢛ 4ꢁ:
SEMITOP 2
#
! ?6 +++ A ;/6
4ꢁ
@
#
#
! ?6 +++ A ;0/
0-6
4ꢁ
4ꢁ
ꢊꢇꢌ
IGBT Module
#ꢉꢏꢃꢋꢍꢅꢔꢊ* ;6 ꢊ
ꢊꢂꢔ
5ꢋꢊꢂꢔ
<ꢁ /6 ꢒ)* ꢏ+ꢃ+ꢊ+ ; ꢃꢋꢍ+ D ; ꢊ
0/66 D .666
5
SK 25 GH 063
# 3 0/ 4ꢁ* ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
Preliminary Data
min.
typ.
max. Units
5ꢁ,ꢘꢊꢅꢇꢛ
5%,ꢘꢇꢕꢛ
ꢁꢋꢉꢊ
$ꢁ 3 0/ <* #@ 3 0/ ꢘ;0/ꢛ 4ꢁ
;*E ꢘ0*;ꢛ
/*/
0*- ꢘ0*Eꢛ
-*/
5
5
Features
5ꢁ, 3 5%,: $ꢁ 3 6*666C <
5ꢁ, 3 0/ 5: 5%, 3 6 5: ; =ꢒ)
ꢄꢉꢏ $%ꢚ#
?*/
;*-
ꢍB
GDH
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
Fꢇꢕꢘ@!ꢊꢛ
;*?
ꢄꢉꢏ ꢃꢂꢈꢑꢔꢉ
GDH
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊI
5ꢁꢁ 3 .66 5 * 5%, 3 7;/ 5
ꢇꢈꢘꢂꢍꢛ
ꢇꢏ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
.C
?6
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢍꢊ
$ꢁ 3 0/ <* #@ 3 ;0/ 4ꢁ
!ꢆꢕꢅꢍꢍꢉꢔ ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ ꢊꢋꢔꢋꢆꢂꢍ
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ "#! ꢂꢍ
ꢄꢑꢍꢆꢕ!ꢇꢕꢏꢂꢑꢌꢕ $%ꢚ#ꢛ
ꢀ
F%ꢂꢍ 3 F%ꢂꢓꢓ 3 .. J
066
.6
,ꢂꢍ A ,ꢂꢓꢓ
$ꢍꢈꢑꢆꢇꢋ2ꢉ ꢔꢂꢅꢈ
;*E
ꢃK
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ&
'ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ
ꢀ
ꢀ
Inverse/Freewheeling CAL diode
5B 3 5,ꢁ
5ꢘ#ꢎꢛ
ꢏ#
$
B 3 0/ <: #@ 3 0/ ꢘ;0/ꢛ 4ꢁ
;*?/ ꢘ;*?ꢛ ;*C ꢘ;*C/ꢛ
5
5
#@ 3 ꢘ;0/ꢛ 4ꢁ
#@ 3 ꢘ;0/ꢛ 4ꢁ
ꢘ6*9/ꢛ
ꢘ00ꢛ
ꢘ6*Eꢛ
ꢘ.0ꢛ
(' ꢏꢉꢆꢂꢌꢍꢋ)ꢉꢈ* ꢓꢋꢔꢉ ꢍꢂ+ , -. /.0
ꢀ
ꢃJ
Typical Applications
Fꢇꢕꢘ@!ꢊꢛ
;*C
GDH
1ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉꢛ
$ꢍ2ꢉꢏꢇꢉꢏ
1ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
("1
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊI
ꢀ
ꢀ
ꢀ
ꢀ
$
$B 3 0/ <: 5F 3 .66 5
;-
0
<
FF=
Lꢏꢏ
ꢈ$BDꢈꢇ 3 !/66 <DMꢊ
Mꢁ
,
5%, 3 6 5: #@ 3 ;0/ 4ꢁ
6*0/
ꢃK
ꢂꢓꢓ
Mechanical data
=;
ꢃꢂꢑꢍꢇꢋꢍꢌ ꢇꢂꢏNꢑꢉ
0
ꢃ
ꢌ
ꢐ
0;
#/
ꢁꢅꢊꢉ
1,=$#ꢎ"O
0
GH
1
28-02-2006 DIL
© by SEMIKRON
SK 25 GH 063
Fig.5 Typ. output characteristic, tp = 80 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 80 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
28-02-2006 DIL
© by SEMIKRON
SK 25 GH 063
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Diode turn-off energy dissipation per pulse
3
28-02-2006 DIL
© by SEMIKRON
SK 25 GH 063
UL Recognized
File no. E 63532
Dimensions in mm
ꢁꢅꢊꢉ #/
%ꢒ
1(%%,1#,ꢙ ꢒꢎ',ꢙ$<=,#,F BꢎF #ꢒ, 1ꢎ'ꢙ,F "$ 1 < ꢙ #ꢒ, =ꢎ( #$ % "$ 1 $ #ꢒ,
"ꢁꢚI 0 ꢃꢃ
ꢁꢅꢊꢉ # .
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
28-02-2006 DIL
© by SEMIKRON
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