SK25GD12T4ETP [SEMIKRON]
Insulated Gate Bipolar Transistor,;
| 型号： | SK25GD12T4ETP |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 双极性晶体管 |
| 文件： | 总5页 (文件大小：839K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK25GD12T4ET
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Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢄ
Values
Units
$
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0)11
32
$
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31
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SEMITOP 3
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Inverse Diode
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SK25GD12T4ET
Module
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Target Data
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Features
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ꢐꢆꢃꢂꢅꢑꢒ ꢓꢔꢕꢐ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ
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Characteristics
Symbol Conditions
IGBT
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min.
typ.
max. Units
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Remarks
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GD-ET
1
27-05-2009 DIL
© by SEMIKRON
SK25GD12T4ET
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
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=8
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ꢆꢆ
IGBT Module
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31
SK25GD12T4ET
Temperature sensor
4011
ꢐꢄ '011+ꢗ >4)*'*KC?
ꢒG37*L
C
Target Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃ ꢄꢅꢆꢃꢇ ꢈꢉꢊꢂꢋꢌꢂꢍ ꢈꢉꢎꢊꢏꢃ
ꢐꢆꢃꢂꢅꢑꢒ ꢓꢔꢕꢐ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ
ꢗꢘꢙꢒ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ ꢚꢛ
ꢓꢂꢋꢃꢍꢆ!ꢋꢃꢎ "ꢐꢗ ꢋꢃꢈ#ꢃꢆ!ꢋꢊꢆꢃ
ꢀ
ꢀ
ꢀ
ꢀ
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
ꢄꢃꢂꢄꢉꢆ
Typical Applications*
Remarks
$
& $ ' ꢅꢑꢌ# ꢏꢃ(ꢃꢏ (!ꢏꢊꢃ
ꢀ
ꢗ%&ꢄ!ꢋ
ꢚ
GD-ET
2
27-05-2009 DIL
© by SEMIKRON
SK25GD12T4ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
27-05-2009 DIL
© by SEMIKRON
SK25GD12T4ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
27-05-2009 DIL
© by SEMIKRON
SK25GD12T4ET
ꢗ!ꢄꢃ ꢐ*) >-ꢊꢍꢍꢃꢄꢋꢃꢎ ꢑꢉꢏꢃ ꢎꢌ!ꢈꢃꢋꢃꢆ ,ꢉꢆ ꢄꢉꢏꢎꢃꢆ #ꢌꢂꢄ !ꢂꢎ #ꢏ!ꢄꢋꢌꢅ ꢈꢉꢊꢂꢋꢌꢂꢍ #ꢌꢂꢄM )ꢈꢈ?
ꢗ!ꢄꢃ ꢐ *)
ꢔ @%ꢐ
5
27-05-2009 DIL
© by SEMIKRON
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