SK25GB12T4 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK25GB12T4 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：766K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK25GB12T4
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Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢄ
Values
Units
!
ꢐ- % () *ꢗ
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21
!
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ꢓꢗ
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ꢐꢄ % 10 *ꢗ
20
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Inverse Diode
IGBT Module
ꢓꢚ
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ꢐꢄ % () *ꢗ
ꢐꢄ % 10 *ꢗ
20
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Target Data
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Features
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Characteristics
Symbol Conditions
IGBT
ꢄ
min.
typ.
max. Units
Typical Applications*
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IGꢛ
GB
1
27-05-2009 DIL
© by SEMIKRON
SK25GB12T4
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
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ꢓꢚꢂꢉꢈ % () ꢘ8 !ꢔ" % 0 !
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20
SK25GB12T4
Target Data
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Features
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
ꢁꢂꢃ ꢄꢅꢆꢃꢇ ꢈꢉꢊꢂꢋꢌꢂꢍ ꢈꢉꢎꢊꢏꢃ
ꢐꢆꢃꢂꢅꢑꢒ ꢓꢔꢕꢐ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ
ꢗꢘꢙꢒ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ ꢚꢛ
ꢀ
ꢀ
ꢀ
Typical Applications*
Remarks
!
# ! % ꢅꢑꢌ& ꢏꢃ'ꢃꢏ '$ꢏꢊꢃ
ꢚ
ꢀ
ꢗ"#ꢄ$ꢋ
GB
2
27-05-2009 DIL
© by SEMIKRON
SK25GB12T4
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
27-05-2009 DIL
© by SEMIKRON
SK25GB12T4
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
27-05-2009 DIL
© by SEMIKRON
SK25GB12T4
ꢗ$ꢄꢃ ꢐ2( =,ꢊꢍꢍꢃꢄꢋꢃꢎ ꢑꢉꢏꢃ ꢎꢌ$ꢈꢃꢋꢃꢆ +ꢉꢆ ꢄꢉꢏꢎꢃꢆ &ꢌꢂꢄ $ꢂꢎ &ꢏ$ꢄꢋꢌꢅ ꢈꢉꢊꢂꢋꢌꢂꢍ &ꢌꢂꢄL (ꢈꢈ>
ꢗ$ꢄꢃ ꢐ 2(
ꢔꢕ
5
27-05-2009 DIL
© by SEMIKRON
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