2N3506 [SEMICOA]
Type 2N3506 Geometry 1506 Polarity NPN; 类型2N3506几何1506极性NPN
| 型号： | 2N3506 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N3506 Geometry 1506 Polarity NPN |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N3506
Ge ne ric Pa rt Numbe r:
2N3506
Type 2N3506
Geometry 1506
Polarity NPN
Qual Level: JAN - JANTXV
REF: MIL-PRF-19500/349
Features:
·
General-purpose silicon transistor
for switching and amplifier appli-
cations.
·
·
Housed in TO-39 case.
Also available in chip form using
the 1506 chip geometry.
·
The Min and Max limits shown are
per MIL-PRF-19500/349 which
Semicoa meets in all cases.
TO-39
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
VCEO
VCBO
VEBO
IC
Rating
40
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25oC
60
V
5.0
V
3.0
A
1.0
W
PT
Derate above 25oC
mW/oC
oC
5.71
TJ
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
oC
TSTG
Data Sheet No. 2N3506
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
IC = 10 µA
Symbol
Min
Max
Unit
V(BR)CBO
60
---
V
Collector-Emitter Breakdown Voltage
IC = 10 mA
V(BR)CEO
V(BR)EBO
ICEX1
40
5.0
---
---
---
V
V
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCE = 40 V, VEB = 4 V
1.0
1.0
µA
µA
Collector-Emitter Cutoff Current
VCE = 40 V, VEB = 4 V, TA = +150oC
Collector Current Continuous
VCB = 50 V
ICEX2
---
IC
3.0
---
A
ON Characteristics
DC Current Gain
Symbol
Min
Max
Unit
IC = 500 mA, VCE = 1 V (pulsed)
hFE1
hFE2
hFE3
hFE4
50
40
30
25
25
250
200
---
---
---
---
---
---
IC = 1.5 A, VCE = 2 V (pulsed)
IC = 2.5 A, VCE = 3 V (pulsed)
IC = 3.0 A, VCE = 5 V (pulsed)
---
IC = 500 mA, VCE = 1 V (pulsed), TA = -55oC
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA (pulsed)
IC = 1.5 A, IB = 150 mA (pulsed)
IC = 2.5 A, IB = 250 mA (pulsed)
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA (pulsed)
IC = 1.5 A, IB = 150 mA (pulsed)
IC = 2.5 A, IB = 250 mA (pulsed)
hFE5
---
VBE(sat)1
VBE(sat)2
VBE(sat)3
---
0.9
---
1.0
1.4
2.0
V dc
V dc
V dc
VCE(sat)1
VCE(sat)2
VCE(sat)3
---
---
---
0.5
1.0
1.5
V dc
V dc
V dc
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
Symbol
Min
Max
Unit
|hFE|
3.0
15
---
VCE = 5 V, IC = 100 mA, f = 20 MHz
Open Circuit Output Capacitance
COBO
CIBO
---
---
40
pF
pF
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 3 V, IC = 0, 100 kHz < f < 1 MHz
300
Pulse Response Characteristics
Delay Time
IC = 1.5 A, IB1 = 150 mA
Rise Time
IC = 1.5 A, IB1 = 150 mA
Storage Time
IC = 1.5 mA, IB2 = IB1 = 150 mA
Fall Time
Symbol
Min
Max
Unit
td
---
15
ns
tr
ts
tf
---
---
---
30
55
35
ns
ns
ns
IC = 1.5 mA, IB2 = IB1 = 150 mA
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