2N3506A [SEMICOA]
Silicon NPN Transistor; 硅NPN晶体管
| 型号： | 2N3506A |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon NPN Transistor |
| 文件： | 总2页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3506A
Data Sheet
Description
Applications
• General purpose switching transistor
• Low power
Semicoa Semiconductors offers:
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3506AJ)
• JANTX level (2N3506AJX)
• JANTXV level (2N3506AJV)
• JANS level (2N3506AJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 1506
• Reference document:
MIL-PRF-19500/349
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
• Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
VCEO
VCBO
Rating
40
Unit
Volts
Volts
60
Volts
A
Emitter-Base Voltage
VEBO
IC
5
Collector Current, Continuous
3
1
Power Dissipation, TA = 25OC
Derate linearly above 25OC
Power Dissipation, TC = 25OC
Derate linearly above 25OC
W
PT
PT
5.71
5
mW/°C
W
28.6
mW/°C
°C/W
Thermal Resistance
175
RθJA
TJ
°C
°C
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3506A
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Symbol
V(BR)CBO
Test Conditions
IC = 100 µA
Min
60
40
5
Typ
Max
Units
Volts
Volts
Volts
µA
V(BR)CEO IC = 10 mA
V(BR)EBO
ICEX1
IE = 10 µA
VCE = 40 Volts, VEB = 4 Volts
1
V
CE = 40 Volts, VEB = 4 Volts,
mA
Collector-Emitter Cutoff Current
ICEX2
1.5
TA = 150°C
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 500 mA, VCE = 1 Volts
IC = 1.5 A, VCE = 2 Volts
IC = 2.5 A, VCE = 3 Volts
IC = 3.0 A, VCE = 5 Volts
IC = 500 mA, VCE = 2 Volts
TA = -55°C
hFE1
hFE2
hFE3
hFE4
hFE5
50
40
30
25
25
250
200
DC Current Gain
VBEsat1
VBEsat2
VBEsat3
VCEsat1
VCEsat2
VCEsat3
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
0.5
1.0
1.5
1.0
1.3
2.0
Volts
Volts
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
0.8
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
VCE = 5 Volts, IC = 100 mA,
f = 20 MHz
|hFE|
3
15
V
CB = 10 Volts, IE = 0 mA,
pF
pF
Open Circuit Output Capacitance
COBO
CIBO
40
100 kHZ < f < 1 MHz
V
EB = 3 Volts, IC = 0 mA,
Open Circuit Input Capacitance
300
100 kHZ < f < 1 MHz
ns
ns
Delay Time
td
tr
IC = 1.5 A, IB1 = 150 mA
15
30
Rise Time
IC = 1.5 A, IB1 = 150 mA
Switching Characteristics
Storage Time
ns
ns
ts
tf
IC = 1.5 A, IB1=IB2 = 150 mA
IC = 1.5 A, IB1=IB2 = 150 mA
55
35
Fall Time
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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