2N3506A [MICROSEMI]
NPN MEDIUM POWER SILICON TRANSISTOR; NPN型中功率硅晶体管
| 型号： | 2N3506A |
| 厂家： | 
Microsemi |
| 描述： | NPN MEDIUM POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
DEVICES
LEVELS
JAN
2N3506
2N3507
JANTX
JANTXV
2N3506A
2N3506L
2N3506AL
2N3507A
2N3507L
2N3507AL
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
2N3506 2N3507
Unit
Vdc
Vdc
Vdc
Adc
40
60
50
80
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
5.0
3.0
@ TA = 25°C (1)
@ TC = 25°C (2)
1.0
5.0
Total Power Dissipation
PT
W
Operating & Storage Temperature Range
Note:
Top, Tstg
-65 to +200
°C
TO-5 (L-Versions)
1) Derate linearly 5.71 mW/°C for TA > +25°C
2) Derate linearly 55.5 mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
40
50
Vdc
2N3506
2N3507
Collector-Emitter Cutoff Current
VCE = 40Vdc
VCE = 60Vdc
ICEX
µAdc
2N3506
2N3507
1.0
1.0
TO-39 (TO-205-AD)
Collector-Base Breakdown Voltage
IC = 100µAdc
60
80
V(BR)CBO
V(BR)EBO
Vdc
Vdc
Emitter-Base Breakdown Voltage
IE = 10µAdc
5
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1Vdc
2N3506
2N3507
50
35
250
175
hFE
hFE
hFE
Forward-Current Transfer Ratio
IC = 1.5Adc, VCE = 2Vdc
2N3506
2N3507
40
30
200
150
Forward-Current Transfer Ratio
IC = 2.5Adc, VCE = 3Vdc
2N3506
2N3507
30
25
T4-LDS-0016 Rev. 1 (072040)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 3.0Adc, VCE = 5Vdc
2N3506
2N3507
25
20
hFE
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1.0Vdc
2N3506
2N3507
25
17
hFE
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 2Vdc
2N3506A
2N3507A
25
17
hFE
Collector-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(sat)
0.5
1.0
1.5
1.0
1.3
2.0
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Collector-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
Base-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
Base-Emitter Saturation Voltage
IC = 1.5Adc, IB = 150mAdc
0.8
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
|hfe|
3.0
15
IC = 100mAdc, VCE = 5Vdc, f = 20MHz
Output Capacitance
Cobo
Cibo
40
pF
pF
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
300
VEB = 3.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS (4)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Delay Time
IC = 1.5Adc, IB1 = 150mAdc
td
15
ns
Rinse Time
IC = 1.5Adc, IB1 = 150mAdc
tr
ts
tf
30
55
35
ns
ns
ns
Storage Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
(4) Consult MIL-PRF-19500/349 For Additional Infornation.
T4-LDS-0016 Rev. 1 (072040)
Page 2 of 2
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