SML80A12 [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
| 型号： | SML80A12 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SML80A12
TO–3 Package Outline.
Dimensions in mm (inches)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
POWER MOSFETS
VDSS
800V
1
2
ID(cont)
11.5A
3
(case)
Ω
RDS(on) 0.650
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
• Faster Switching
• Lower Leakage
• TO–3 Hermetic Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
D
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
G
S
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
Drain – Source Voltage
800
11.5
46
V
A
A
V
DSS
Continuous Drain Current
I
I
D
1
Pulsed Drain Current
DM
Gate – Source Voltage
±30
V
V
GS
V
Gate – Source Voltage Transient
±40
GSM
Total Power Dissipation @ T
Derate Linearly
= 25°C
200
W
case
P
D
1.6
W/°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
–55 to 150
300
T , T
J
STG
°C
A
T
L
1
Avalanche Current (Repetitive and Non-Repetitive)
11.5
30
I
AR
1
Repetitive Avalanche Energy
E
E
AR
AS
mJ
2
Single Pulse Avalanche Energy
1210
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T = 25°C, L = 18.3mH, R = 25Ω, Peak I = 11.5A
J
G
L
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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SML80A12
STATIC ELECTRICAL RATINGS (T
= 25°C unless otherwise stated)
case
Characteristic
Test Conditions
Min. Typ. Max. Unit
BV
I
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
V
V
V
V
V
V
= 0V , I = 250µA
800
V
DSS
GS
DS
DS
GS
DS
DS
GS
GS
D
= V
25
DSS
µA
DSS
(V
= 0V)
= 0.8V
, T = 125°C
250
GS
DSS
C
I
Gate – Source Leakage Current
Gate Threshold Voltage
= ±30V , V
= 0V
±100 nA
GSS
DS
V
= V
> I
, I = 1.0mA
D
2
4
V
A
Ω
GS(TH)
GS
x R
Max
D(ON)
DS(ON)
2
I
On State Drain Current
11.5
D(ON)
= 10V
= 10V , I = 0.5 I [Cont.]
2
R
Drain – Source On State Resistance
0.650
DS(ON)
D
D
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
C
C
C
Input Capacitance
V
V
= 0V
3050 3700
iss
GS
DS
Output Capacitance
= 25V
300
150
150
17
420
225
225
25
pF
nC
oss
rss
Reverse Transfer Capacitance
f = 1MHz
3
Q
Q
Q
t
Total Gate Charge
V
V
= 10V
g
GS
DD
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
= 0.5 V
DSS
gs
gd
I = I [Cont.] @ 25°C
70
105
24
D
D
V
= 15V
12
d(on)
GS
DD
t
t
t
V
= 0.5 V
11
22
r
DSS
ns
Turn-off Delay Time
Fall Time
I = I [Cont.] @ 25°C
60
90
d(off)
f
D
D
R
= 1.6Ω
12
24
G
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
I
I
Continuous Source Current (Body Diode)
1
11.5
A
S
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
46
SM
2
V
t
V
= 0V , I = – I [Cont.]
1.3
V
SD
GS
S
D
Reverse Recovery Time
Reverse Recovery Charge
I = – I [Cont.] , dl / dt = 100A/µs
650
9
ns
µC
rr
S
D
s
Q
I = – I [Cont.] , dl / dt = 100A/µs
S D s
rr
THERMAL CHARACTERISTICS
Characteristic
Min. Typ. Max. Unit
R
R
Junction to Case
0.62
°C/W
30
θJC
Junction to Ambient
θJA
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
6/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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