SML80B12 [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
| 型号： | SML80B12 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SML80B12
TO–247AD Package Outline.
Dimensions in mm (inches)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
POWER MOSFETS
3.55 (0.140)
3.81 (0.150)
1
2
3
VDSS
800V
12A
1.65 (0.065)
2.13 (0.084)
0.40 (0.016)
0.79 (0.031)
ID(cont)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
RDS(on) 0.750
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–247 Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
D
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
G
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
S
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
Drain – Source Voltage
800
12
V
A
A
V
DSS
Continuous Drain Current
I
I
D
1
Pulsed Drain Current
48
DM
Gate – Source Voltage
±30
V
V
GS
V
Gate – Source Voltage Transient
±40
GSM
Total Power Dissipation @ T
Derate Linearly
= 25°C
260
W
case
P
D
2.08
–55 to 150
300
W/°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
T , T
J
STG
°C
A
T
L
1
Avalanche Current (Repetitive and Non-Repetitive)
12
I
AR
1
Repetitive Avalanche Energy
30
E
E
AR
AS
mJ
2
Single Pulse Avalanche Energy
960
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T = 25°C, L = 13.33mH, R = 25 , Peak I = 12A
J
G
L
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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SML80B12
STATIC ELECTRICAL RATINGS (T
= 25°C unless otherwise stated)
case
Characteristic
Test Conditions
Min. Typ. Max. Unit
BV
I
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
V
V
V
V
V
V
= 0V , I = 250 A
D
800
V
DSS
GS
DS
DS
GS
DS
DS
GS
GS
= V
25
DSS
A
DSS
(V
= 0V)
= 0.8V
, T = 125°C
250
GS
DSS
C
I
Gate – Source Leakage Current
Gate Threshold Voltage
= ±30V , V
= 0V
±100 nA
GSS
DS
V
= V
> I
, I = 1.0mA
D
2
4
V
GS(TH)
GS
x R
Max
D(ON)
DS(ON)
2
I
On State Drain Current
12
A
D(ON)
= 10V
= 10V , I = 0.5 I [Cont.]
2
R
Drain – Source On State Resistance
0.75
DS(ON)
D
D
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
C
C
C
Input Capacitance
V
V
= 0V
2700
iss
GS
DS
Output Capacitance
= 25V
265
125
115
16
pF
nC
oss
rss
Reverse Transfer Capacitance
f = 1MHz
3
Q
Q
Q
t
Total Gate Charge
V
V
= 10V
g
GS
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
= 0.5 V
DSS
gs
gd
DD
I = I [Cont.] @ 25°C
66
D
D
V
= 15V
12
d(on)
GS
DD
t
t
t
V
= 0.5 V
11
r
DSS
ns
Turn-off Delay Time
Fall Time
I = I [Cont.] @ 25°C
50
d(off)
f
D
D
R
= 1.6
10
G
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
I
I
Continuous Source Current (Body Diode)
1
12
A
S
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
48
SM
2
V
t
V
= 0V , I = – I [Cont.]
1.3
V
ns
C
SD
GS
S
D
Reverse Recovery Time
Reverse Recovery Charge
I = – I [Cont.] , dl / dt = 100A/ s
600
8
rr
S
D
s
Q
I = – I [Cont.] , dl / dt = 100A/ s
S D s
rr
THERMAL CHARACTERISTICS
Characteristic
Min. Typ. Max. Unit
R
R
Junction to Case
0.48
°C/W
40
JC
JA
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
6/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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