SML80B13F [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
| 型号： | SML80B13F |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总3页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SML80B13F
TO–247AD Package Outline.
Dimensions in mm (inches)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
POWER MOSFETS
3.55 (0.140)
3.81 (0.150)
1
2
3
VDSS
800V
13A
1.65 (0.065)
2.13 (0.084)
0.40 (0.016)
0.79 (0.031)
ID(cont)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
RDS(on) 0.650
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–247 Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
D
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
G
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
S
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
Drain – Source Voltage
800
13
V
A
A
V
DSS
Continuous Drain Current
I
I
D
1
Pulsed Drain Current
52
DM
Gate – Source Voltage
±30
V
V
GS
V
Gate – Source Voltage Transient
±40
GSM
Total Power Dissipation @ T
Derate Linearly
= 25°C
280
W
case
P
D
2.24
–55 to 150
300
W/°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
T , T
J
STG
°C
A
T
L
1
Avalanche Current (Repetitive and Non-Repetitive)
13
I
AR
1
Repetitive Avalanche Energy
30
E
E
AR
mJ
2
Single Pulse Avalanche Energy
1210
AS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T = 25°C, L = mH, R = 25 , Peak I = 13A
J
G
L
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E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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SML80B13F
STATIC ELECTRICAL RATINGS (T
= 25°C unless otherwise stated)
case
Characteristic
Test Conditions
Min. Typ. Max. Unit
BV
I
Drain – Source Breakdown Voltage
V
V
V
V
V
V
V
V
= 0V , I = 250 A
D
800
V
DSS
GS
DS
DS
GS
DS
DS
GS
GS
Zero Gate Voltage Drain Current
= V
25
DSS
A
DSS
(V
= 0V)
= 0.8V
, T = 125°C
1000
GS
DSS
C
I
Gate – Source Leakage Current
= ±30V , V
= 0V
±100 nA
GSS
DS
V
Gate Threshold Voltage
= V
> I
, I = 1.0mA
D
2
4
V
GS(TH)
GS
x R
Max
D(ON)
DS(ON)
2
I
On State Drain Current
13
A
D(ON)
= 10V
= 10V , I = 0.5 I [Cont.]
2
R
Drain – Source On State Resistance
0.65
DS(ON)
D
D
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
C
C
C
Input Capacitance
V
V
= 0V
3050 3700
iss
GS
DS
Output Capacitance
= 25V
300
140
150
17
420
225
225
25
pF
nC
oss
rss
Reverse Transfer Capacitance
f = 1MHz
3
Q
Q
Q
t
Total Gate Charge
V
V
= 10V
g
GS
DD
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
= 0.5 V
DSS
gs
gd
I = I [Cont.] @ 25°C
70
105
24
D
D
V
= 15V
12
d(on)
GS
t
t
t
V
= 0.5 V
11
22
r
DD
DSS
ns
Turn-off Delay Time
Fall Time
I = I [Cont.] @ 25°C
60
90
d(off)
f
D
D
R
= 1.6
12
24
G
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
I
I
Continuous Source Current (Body Diode)
1
13
A
S
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
52
SM
2
V
V
I
= 0V , I = – I [Cont.]
1.3
V
SD
GS
S
D
I [cont]
dI / dt = 100A/µs
S
D
dv / dt
Peak Diode Recovery
V
T
V
V = 200V
R
5
V/ns
DD
DSS
150°C
R = 2.0
G
J
I = – I [Cont.]
T = 25°C
200
350
S
D
J
t
Reverse Recovery Time
Reverse Recovery Charge
Peak Recovery Current
ns
C
rr
dI / dt = 100A/ s
T = 125°C
J
I = – I [Cont.]
T = 25°C
0.7
1.8
11
S
D
J
Q
rr
dl / dt = 100A/ s
T = 125°C
J
I = – I [Cont.]
T = 25°C
S
D
J
I
A
rrm
dl / dt = 100A/ s
T = 125°C
17
J
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
11/99
SML80B13F
THERMAL CHARACTERISTICS
Characteristic
Min. Typ. Max. Unit
R
R
Junction to Case
0.45
°C/W
40
JC
JA
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
11/99
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