BDY26C_07 [SEME-LAB]
HIGH CURRENT NPN SILICON TRANSISTOR; 大电流NPN硅晶体管
| 型号： | BDY26C_07 |
| 厂家： | 
SEME LAB |
| 描述： | HIGH CURRENT NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDY26C
MECHANICAL DATA
Dimensions in mm (inches)
HIGH CURRENT
NPN SILICON TRANSISTOR
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
FEATURES
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
•
•
•
•
•
HIGH SWITCHING CURRENTS
HIGH RELIABILITY
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
JAN LEVEL SCREENING OPTIONS
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
APPLICATIONS
7.92 (0.312)
12.70 (0.50)
•
SWITCHING REGULATORS
LINEAR APPLICATIONS
•
TO3 (TO204AA)
Pin 2 = Emitter
Pin 1 = Base
Case = Collector
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°C unless otherwise stated
VCBO
VCEO
VEBO
IC
Collector - Base Voltage
Collector - Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
300V
180V
10V
6A
IB
3A
Ptot
Total Power Dissipation at
Tcase = 25°C
50W
Derate above 25°C
0.29 W/°C
200°C
-65 to 200°C
TJ
Junction Temperature
Storage Temperature
Tstg
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
DOC 6012, ISSUE 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
BDY26C
Max
3.5
Unit
THERMAL CHARACTERISTICS
Rth j-case Thermal resistance to case
°C/W
ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit
ICEO
Collector Cut-Off Current
VCE = 140V
VCE = 180V
VEB = 10V
IC = 50mA
IC = 3mA
IC = 2.0A
IC = 2.0A
IC = 1.0A
IC = 2.0A
IB = 0
1.0
mA
ICES
Collector Cut-Off Current
VBE = 0
IC = 0
IB = 0
1.0
1.0
IEBO
Emitter Cut-Off Current
V(BR)CEO
V(BR)CBO
VCE(sat)
VBE(sat)
*
*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
180
300
V
*
IB = 0.25A
IB = 0.25A
VCE = 4.0V
VCE = 4.0V
0.6
1.2
*
90
82
hFE*
Forward-current transfer ratio
75
180
DYNAMIC CHARACTERISTICS
IE = 0
VCB = 10V
VCE = 15V
Cobo
Output Capacitance
65
120
pF
MHz
µs
f = 1.0MHz
IC = 0.5A
f = 10.0MHz
IC= 5.0A
IC= 5.0A
FT
Transition Frequency
10
Ton
Toff
Turn-on time
Turn-off time
IB1= 1.0A
1.0
6
IB1=-IB2= 1.0A
* Pulse test tp = 300µs, δ < 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
DOC 6012, ISSUE 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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