BDY27 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | BDY27 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY27
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A
·High Switching Speed
APPLICATIONS
·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
400
200
10
UNIT
V
V
Collector Current-Continuous
Base Current
6
A
IB
3
A
PC
Collector Power Dissipation@TC=25℃
Junction Temperature
87.5
200
-65~200
W
℃
℃
TJ
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
2.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BDY27
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
200
400
TYP.
MAX
UNIT
V
IC= 50mA; IB= 0
IC= 3mA; IE= 0
V
IC= 2A; IB= 0.25A
IC= 2A; IB= 0.25A
VCE= 300V; VBE= 0
VCE= 200V; IB= 0
VEB= 10V; IC= 0
0.6
1.2
1.0
1.0
1.0
100
V
VCE
VBE
(sat)
V
(sat)
ICES
mA
mA
mA
ICEO
IEBO
hFE
fT
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
IC= 2A; VCE= 4V
15
10
Current Gain-Bandwidth Product
IC= 0.5; VCE= 15V; f=10MHz
MHz
Switching Times
Turn-On Time
IC= 5A; IB= 1A
0.5
2.0
μs
μs
ton
Turn-Off Time
IC= 5A; IB1= 1A; IB2= -0.5A
toff
hFE Classifications
A
B
C
15-45
30-90
75-100
isc Website：www.iscsemi.cn
2
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