BDY27 [COMSET]

NPN SILICON TRANSISTORS, DIFFUSED MESA; NPN硅晶体管， DIFFUSED MESA

BDY27


型号：	BDY27
厂家：	COMSET SEMICONDUCTOR
描述：	NPN SILICON TRANSISTORS, DIFFUSED MESA NPN硅晶体管， DIFFUSED MESA 晶体晶体管
文件：	总4页 (文件大小：253K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

COMSET

SEMICONDUCTORS

BDY26, 183 T2

BDY27, 184 T2

BDY28, 185 T2

NPN SILICON TRANSISTORS, DIFFUSED

MESA

LF Large Signal Power Amplification

High Current Fast Switching

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

BDY26, 183T2

180

200

250

300

400

500

Collector-Emitter Voltage

Collector-Base Voltage

V_CEO

V

V_CBO

V

Emitter-Base Voltage

Collector Current

Base Current

V_EBO

I_C

10

V

A

6

3

I_B

A

Power Dissipation

@ T_C= 25° BDY27, 184T2

P_TOT

87.5

Watts

BDY28, 185T2

Junction Temperature

Storage Temperature

T_J

T_S

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

-65 to +200

°C

Page 1 of 4

COMSET

SEMICONDUCTORS

BDY26, 183 T2

BDY27, 184 T2

BDY28, 185 T2

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

Thermal Resistance, Junction to Case

R_thJ-C

2

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Test Condition(s)

Symbol

Ratings

Min Typ Mx Unit

BDY26, 183T2

BDY27, 184T2

180

200

-

-

-

-

-

-

-

-

-

-

-

-

Collector-Emitter

I_C=50 mA, I_B=0

BDY28A, 185T2A 250

BDY28B, 185T2B 250

BDY28C, 185T2C 220

V

V_CEO(BR)

Breakdown Voltage (*)

V_CE=180 V

V_CE=200 V

V_CE=250 V

BDY26

BDY27

BDY28

-

-

-

Collector-Emitter Cutoff

Current

1.0

mA

mA

I_CEO

-

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

V_EB=10 V

Emitter-Base Cutoff Current

-

-

1.0

I_EBO

V_CE=250 V

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

-

-

-

-

-

-

V

_BE=0 V

Collector-Emitter Cutoff

Current

V_CE=300 V

V_BE=0 V

1.0

mA

I_CES

V_CE=400 V

V_BE=0 V

Page 2 of 4

COMSET

SEMICONDUCTORS

BDY26, 183 T2

BDY27, 184 T2

BDY28, 185 T2

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

-

-

-

-

-

-

-

-

Collector-Emitter saturation

I_C=2.0 A, I_B=0.25 A

Voltage (*)

0.6

V

V

V

V_CE(SAT)

V_(BR)CBO

V_BE(SAT)

BDY26, 183T2 300

BDY27, 184T2 400

BDY28, 185T2 500

-

-

-

Collector-Base Breakdown

Voltage (*)

I_C=3 mA

-

-

-

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

-

-

-

-

-

-

15

30

75

I_C=2.0 A, I_B=0.25 A

Base-Emitter Voltage (*)

1.2

-

A

B

C

A

B

C

55

65

90

20

45

-

-

V_CE=4 V, I_C=1 A

V_CE=4 V, I_C=2 A

-

Static Forward Current

transfer ratio (*)

-

h_21E

45

90

82 180

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

V_CE=15 V, I_C=0.5 A,

f=10 MHz

Transition Frequency

Turn-on time

10

-

-

-

-

MHz

µs

f_T

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

I_C=5 A,

I_B=1 A

-

1

t_d+ t_r

t_s+ t_f

A

B

C

2

3.5

6

I_C=5 A,

I_B1=1 A,

I_B2=-1 A

Turn-off time

-

µs

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

Page 3 of 4

COMSET

SEMICONDUCTORS

BDY26, 183 T2

BDY27, 184 T2

BDY28, 185 T2

MECHANICAL DATA

DIMENSIONS

mm

A

B

C

D

E

G

H

L

25,45

38,8

30,09

17,11

9,78

11,09

8,33

1,62

19,43

1

M

N

P

4,08

Pin 1 :

Pin 2 :

Case :

Base

Emitter

Collector

Page 4 of 4

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