2N7081220MISO [SEME-LAB]
N-CHANNEL POWER MOSFET; N沟道功率MOSFET
| 型号： | 2N7081220MISO |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总2页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7081–220M–ISO
MECHANICAL DATA
Dimensions in mm(inches)
N–CHANNEL
POWER MOSFET
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.67 (0.420)
0.89 (0.035)
1.14 (0.045)
VDSS
100V
11A
3.56 (0.140)
3.81 (0.150)
Dia.
ID(cont)
RDS(on)
Ω
0.15
1 2 3
FEATURES
• TO–220 ISOLATED HERMETIC PACKAGE
• LOW RDS
(ON)
0.64 (0.025)
0.89 (0.035)
Dia.
• SIMPLE DRIVE REQUIREMENTS
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO–220 Metal Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
100V
±20V
DS
V
GS
I
I
T = 25°C
11A
D
C
T = 100°C
7.7A
C
1
Pulsed Drain Current
48A
DM
P
Power Dissipation
T = 25°C
45W
D
C
T = 100°C
18W
C
T , T
Operating and Storage Temperature Range
–55 to 150°C
300°C
J
stg
1
T
Lead Temperature ( / ” from case for 10 sec.)
L
16
Semelab plc Telephone (01455) 556565
Fax (01455) 552612.
Web site: http://www.semelab.co.uk
Prelim. 6/98
E-mail: sales@semelab.co.uk
2N7081–220M–ISO
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
BV
V
V
V
V
V
V
V
= 0
= V
= 0
I = 250µA
100
2
V
DSS
GS
DS
DS
DS
GS
DS
GS
D
I = 250µA
4
V
GS
D
V
I
V
= ±20V
GS
±100
25
nA
GS(th)
= 80V
= 0
µA
A
Zero Gate Voltage Drain Current
DSS
T = 125°C
250
J
I
= 10V
= 10V
V
= 10V
GS
11
4
On–State Drain Current
Static Drain – Source On–State
Resistance
D(on)
0.12
0.22
5
0.15
0.27
R
Ω
S
DS(on)
I = 7.7A
T = 125°C
J
D
g
V
= 15V
I
= 7.7A
DS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
fs
DS
C
C
C
t
V
V
= 0
600
190
35
7
iss
GS
DS
= 25V
pF
ns
Output Capacitance
oss
rss
f = 1MHz
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
V
V
= 50V
I = 11A
D
d(on)
DD
t
t
t
=10V
45
30
10
r
GEN
R = 4.1Ω
Turn–Off Delay Time
Fall Time
d(off)
f
L
R = 7.5Ω
G
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
12
48
Continuous Source Current
S
A
2
Pulse Source Current
SM
V
t
I =11
V = 0
GS
2.5
300
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SD
F
I = I
S
100
0.7
ns
µC
rr
F
Q
dI /dt = 100A/µs
F
rr
PACKAGE CHARACTERISTICS
R
R
R
Thermal Resistance Junction – Case
2.8
80
θJC
θJA
θCS
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
K/W
1
Semelab plc Telephone (01455) 556565
Fax (01455) 552612.
Web site: http://www.semelab.co.uk
Prelim. 6/98
E-mail: sales@semelab.co.uk
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