2N7085 [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE TRANSISTOR; N沟道增强型晶体管
| 型号： | 2N7085 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7085
MECHANICAL DATA
Dimensions in mm(inches)
N–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.67 (0.420)
0.89 (0.035)
1.14 (0.045)
3.56 (0.140)
3.81 (0.150)
Dia.
V(BR)DSS
ID(A)
100V
20A
1 2 3
RDS(on)
0.075
0.64 (0.025)
0.89 (0.035)
Dia.
2.54 (0.100)
BSC
3.05 (0.120)
BSC
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
TO–257AB Metal Package
• SCREENING OPTIONS AVAILBLE
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Drain – Source Voltage
100V
±20V
DS
V
Gate – Source Voltage
GS
I
I
Continuous Drain Current (T = 150°C) T = 25°C
20A
D
J
C
T = 100°C
12A
C
Pulsed Drain Current
Power Dissipation
80A
DM
P
T = 25°C
60W
D
C
T = 100°C
20W
C
T , T
Operating Junction and Storage Temperature Range
–55 to 150°C
300°C
J
stg
1
T
Lead Temperature ( / ” from case for 10 sec.)
L
16
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99
2N7085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
V
V
Drain–Source Breakdown Voltage V = 0
I = 250µA
100
2
V
(BR)DSS
GS(th)
GSS
GS
D
Gate Threshold Voltage
V
V
V
V
V
V
= V
= 0
I = 250µA
4
V
DS
DS
DS
GS
DS
GS
GS
D
I
I
I
Gate – Body Leakage
V
= ±20V
±100
25
nA
GS
= 80V
= 0
µA
A
Zero Gate Voltage Drain Current
DSS
T = 125°C
250
J
1
= 10V
= 10V
V
= 10V
GS
20
On–State Drain Current
D(on)
0.06
0.11
8.0
0.075
0.14
Drain – Source On–State
r
DS(on)
1
I = 12A
T = 125°C
J
Resistance
D
1
g
V
= 15V
I = 12A
DS
5.0
S
Forward Transconductance
fs
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
C
C
C
V
V
= 0
1400
480
110
35
iss
GS
= 25V
pF
nC
Output Capacitance
oss
rss
DS
f = 1MHz
Reverse Transfer Capacitance
2
Q
Q
Q
t
50
20
Total Gate Charge
g
50V
V
V
= 0.5 x V
= 10V
DS
(BR)DSS
2
10
Gate Source Charge
gs
gd
I = 20A
GS
D
2
18
25
Gate Drain Charge
2
V
= 50V
=10V
GEN
I = 20A
13
30
Turn–On Delay Time
d(on)
DD
D
2
t
t
t
V
85
120
80
Rise Time
r
ns
2
R = 2.5
35
Turn–Off Delay Time
d(off)
f
L
2
R = 4.7
75
95
Fall Time
G
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
20
80
Continuous Current
S
A
Pulsed Current
SM
1
V
t
I = 20A
V = 0
GS
2.5
400
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SD
F
I = 20A
150
0.5
ns
µC
rr
F
Q
di/dt = 100A/µs
rr
1
2
Pulse test : Pulse Width < 300 s ,Duty Cycle < 2%
Independent of Operating Temperature
THERMAL RESISTANCECHARACTERISTICS
Parameter
Min.
Typ.
Max. Unit
R
R
R
thJC
thJA
thCS
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Case to Sink
2.1
°C/W
80
1.0
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99
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