2N7091 [SEME-LAB]
P?CHANNEL ENHANCEMENT MODE TRANSISTOR; P ？ CHANNEL增强型晶体管
| 型号： | 2N7091 |
| 厂家： | 
SEME LAB |
| 描述： | P?CHANNEL ENHANCEMENT MODE TRANSISTOR |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7091
MECHANICAL DATA
Dimensions in mm(inches)
P–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.67 (0.420)
0.89 (0.035)
1.14 (0.045)
3.56 (0.140)
3.81 (0.150)
Dia.
V(BR)DSS
ID(A)
RDS(on)
-100V
-14A
0.20
1 2 3
0.64 (0.025)
0.89 (0.035)
Dia.
2.54 (0.100)
BSC
3.05 (0.120)
BSC
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
TO–257AB Metal Package
• SCREENING OPTIONS AVAILBLE
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Drain – Source Voltage
- 100V
20V
DS
V
Gate – Source Voltage
GS
I
I
Continuous Drain Current (T = 150°C) T = 25°C
-14A
D
J
C
T = 100°C
-8.7A
C
Pulsed Drain Current
Power Dissipation
56A
DM
P
T = 25°C
70W
D
C
T = 100°C
27W
C
T , T
Operating Junction and Storage Temperature Range
–55 to 150°C
300°C
J
stg
1
T
Lead Temperature ( / ” from case for 10 sec.)
L
16
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 2653
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N7091
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
V
V
Drain–Source Breakdown Voltage V = 0
I = -250µA
-100
-2
V
(BR)DSS
GS(th)
GSS
GS
D
Gate Threshold Voltage
V
V
V
V
V
V
= V
= 0
I = -250µA
-4
V
DS
DS
DS
GS
DS
GS
GS
D
I
I
I
Gate – Body Leakage
V
= 20V
100
-25
nA
GS
= -80V
= 0
µA
A
Zero Gate Voltage Drain Current
DSS
T = 125°C
-250
J
1
= -10V
= -10V
V
= -10V
GS
-14
5.0
On–State Drain Current
D(on)
0.15
2.3
0.20
0.32
Drain – Source On–State
r
DS(on)
1
I = 8.7A
T = 125°C
J
Resistance
D
1
g
V
= -15V
I = -8.7A
DS
S
Forward Transconductance
fs
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
C
C
C
V
V
= 0
1300
750
310
50
iss
GS
= 25V
pF
nC
Output Capacitance
oss
rss
DS
f = 1MHz
Reverse Transfer Capacitance
2
Q
Q
Q
t
62
15
35
30
80
80
60
Total Gate Charge
g
V
V
= -50
DS
GS
2
10
Gate Source Charge
gs
gd
= -10V
I = -14A
D
2
27
Gate Drain Charge
2
V
= -50V
=-10V
GEN
I = -14A
10
Turn–On Delay Time
d(on)
DD
D
2
t
t
t
V
50
Rise Time
r
ns
2
R = 3.5
40
Turn–Off Delay Time
d(off)
f
L
2
R = 4.7
40
Fall Time
G
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
-14
-56
-2
Continuous Current
S
A
Pulsed Current
SM
1
V
t
I = -14A
V = 0
GS
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SD
F
I = -14A
150
0.3
300
ns
µC
rr
F
Q
di/dt = 100A/µs
rr
1
2
Pulse test : Pulse Width < 300 s ,Duty Cycle < 2%
Independent of Operating Temperature
THERMAL RESISTANCECHARACTERISTICS
Parameter
Min.
Typ.
Max. Unit
R
R
R
thJC
thJA
thCS
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Case to Sink
1.8
°C/W
80
1.0
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 2653
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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