2N5885 [SEME-LAB]
NPN MULTI - EPITAXIAL POWER TRANSISTOR; NPN多 - 外延功率晶体管
| 型号： | 2N5885 |
| 厂家： | 
SEME LAB |
| 描述： | NPN MULTI - EPITAXIAL POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5885
MECHANICAL DATA
Dimensions in mm(inches)
NPN MULTI - EPITAXIAL
POWER TRANSISTOR
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
FEATURES
1
2
• HIGH VOLTAGE
• LOW SATURATION VOLTAGES
• HIGH RELIABILITY
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
• POWER SWITCHING CIRCUITS
• LINEAR APPLICATIONS
TO–3(TO204AA)
PIN 1 — Base PIN 2 — Emitter
Case is Collector
.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
V
V
V
Collector – Base Voltage (I = 0)
60V
60V
CBO
CEO
EBO
E
Collector – Emitter Voltage (I = 0)
B
Emitter – Base Voltage (I = 0)
5V
C
I
I
I
Collector Current
Peak Collector Current
Base Current
25A
C
50A
CM
B
7.5A
P
Total Power Dissipation at T
≤ 25°C
case
200W
–65 to 200°C
200°C
tot
T
,
Storage Temperature
stg
T
Junction Temperature
j
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6366
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N5885
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ.
Max. Unit
Collector - Emitter Breakdown
V
V
I = 200mA
60
V
CEO(BR)*
C
Voltage
Base – Emitter Voltage
I = 10A
V
V
= 4V
1.5
1.0
10
1.0
2
V
BE*
C
CE
BE
V
= 60V
= –1.5V
CE
I
Collector Cut-off Current
mA
CEV
TCASE =150°C
I = 0
I
I
I
Emitter Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector – Emitter Saturation
Voltage
V
V
V
= 5V
mA
mA
mA
EBO
CEO
CBO
EB
CE
CE
C
= 30V
= 60V
I = 0
B
I = 0
1.0
1.0
4
E
I = 15A
I = 1.5A
B
C
V
V
V
V
CE(sat)*
BE(sat)*
FE*
I = 25A
I = 6.25A
B
C
Base – Emitter
I = 25A
I = 6.25A
2.5
C
B
Saturation Voltage
I = 3A
V
V
V
= 4V
= 4V
= 4V
35
20
4
C
CE
CE
CE
h
DC Current Gain
I = 10A
100
—
C
I = 25A
C
h
Small Signal Current Gain
Collector Base Capacitance
Transition Frequency
Rise Time
I = 3A
V
= 4V f = 1 KHz
= 10V f = 1 MHz
20
—
pF
fe
C
CE
C
fT
I = 0
V
500
cbo
E
CB
I = 1.0A V = 10V f = 1 MHz
4
MHz
C
CB
t
r
0.7
1.0
0.8
V
= 30V
I = 10A
C
CC
= - I
t
Storage Time
µs
s
I
= 1.0A
B2
B1
t
f
Fall Time
THERMAL CHARACTERISTICS
R
Thermal Resistance Junction to Case
Max
0.875
°C/W
θJC
* Pulse test t = 300µs , δ = 1.5 %
p
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6366
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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