2N5886 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5886 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5885 2N5886
DESCRIPTION
·With TO-3 package
·Complement to type 2N5883 2N5884
·High power dissipations
APPLICATIONS
·They are intended for use in power linear
and switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
60
UNIT
2N5885
2N5886
2N5885
2N5886
VCBO
Collector-base voltage
Open emitter
V
80
60
VCEO
Collector-emitter voltage
Open base
V
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
A
A
W
ꢀ
25
Collector current-peak
Base current
50
7.5
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25ꢀ
200
200
-65~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
0.875
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5885 2N5886
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2N5885
2N5886
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
V
80
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=15A; IB=1.5A
Collector-emitter saturation voltage IC=25A; IB=6.25A
1
4
V
V
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
IC=25A; IB=6.25A
IC=10A ; VCE=4V
VCB=ratedVCBO; IB=0
VCE=30V; IB=0
2.5
1.5
1
V
V
ICBO
mA
2N5885
2N5886
Collector
cut-off current
ICEO
2
mA
V
CE=40V; IB=0
VCE=ratedVCEO
CE=ratedVCEO; TC=150ꢀ
VEB=5V; IC=0
;
1
10
1
mA
mA
mA
Collector cut-off current
(VBE(off)=1.5V)
ICEV
V
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter cut-off current
DC current gain
IC=3A ; VCE=4V
35
20
4
DC current gain
IC=10A ; VCE=4V
100
DC current gain
IC=25A ; VCE=4V
Trainsistion frequency
IC=1A ; VCE=10V;f=1MHz
4
MHz
Switching times
tr
ts
tf
Rise time
0.7
1.0
0.8
µs
µs
µs
IC=10A ;IB1=- IB2=1A
VCC=30V
Storage time
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5885 2N5886
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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