2N5886 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5886 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5885 2N5886
DESCRIPTION
·With TO-3 package
·Complement to type 2N5883 2N5884
APPLICATIONS
·They are intended for use in power linear
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
3
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
60
UNIT
2N5885
2N5886
2N5885
2N5886
VCBO
Collector-base voltage
Open emitter
V
80
60
Collector-emitter
voltage
VCEO
Open base
V
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
25
Collector current-peak
Base current
50
A
7.5
A
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
200
200
-65~200
W
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
0.875
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5885 2N5886
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5885
2N5886
60
Collector-emitter
sustaining voltage
VCEO(sus)
IC=0.2A ;IB=0
V
80
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
IC=15A; IB=1.5A
IC=25A; IB=6.25A
IC=25A; IB=6.25A
IC=10A ; VCE=4V
VCB=ratedVCBO; IB=0
VCE=30V; IB=0
1
4
V
V
2.5
1.5
1
V
V
ICBO
Collector cut-off current
mA
2N5885
Collector cut-off current
2N5886
ICEO
2
mA
VCE=40V; IB=0
VCE=ratedVCEO
CE=ratedVCEO; TC=150℃
VEB=5V; IC=0
;
1
10
1
mA
mA
mA
Collector cut-off current
(VBE(off)=1.5V)
ICEV
V
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter cut-off current
DC current gain
IC=3A ; VCE=4V
35
20
4
DC current gain
IC=10A ; VCE=4V
100
DC current gain
IC=25A ; VCE=4V
Trainsistion frequency
IC=1A ; VCE=10V;f=1MHz
4
MHz
Switching times
tr
ts
tf
Rise time
0.7
1.0
0.8
μs
μs
μs
IC=10A ;IB1=- IB2=1A
VCC=30V
Storage time
Fall time
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5885 2N5886
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic
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