2N4910X_03 [SEME-LAB]
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE; 外延NPN功率晶体管TO66密封包装型号: | 2N4910X_03 |
厂家: | SEME LAB |
描述: | NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
文件: | 总2页 (文件大小:20K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2N4910X
2N4911X
2N4912X
MECHANICAL DATA
Dimensions in mm (inches)
NPN EPITAXIAL
POWER TRANSISTOR
IN TO66
HERMETIC PACKAGE
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
3.61 (0.142)
4.08(0.161)
max.
rad.
FEATURES
• LOW SATURATION VOTAGE
• HERMETIC METAL PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
1
2
1.27 (0.050)
1.91 (0.750)
APPLICATIONS
• Driver Circuits
• Switching
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
• Amplifiers
TO–66 (TO-213AA)
Metal Package
PIN 1 = BASE
PIN 2 = EMITTER CASE = COLLECTOR
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C unless otherwise stated)
2N4910X 2N4911X 2N4912X
case
V
V
V
Collector – Base Breakdown Voltage
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
Continuous Collector Current
Base Current
40V
40V
60V
60V
80V
80V
(BR)CBO
(BR)CEO
(BR)EBO
5V
I
I
1A
C
1A
B
P
Total Power Dissipation
25W
D
T
T
Operating Case Temperature Range
Storage Temperature Range
Thermal Resistance , Junction To Case
–65 to +200°C
–65 to +200°C
7.0°C/W
C
stg
R
θJC
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3933
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N4910X
2N4911X
2N4912X
Electrical Characteristics (T = 25°C unless otherwise stated.)
C
Parameter
Test Conditions
Min.
Typ. Max. Units
I
I
Collector – Emitter Cut-off Current
V
V
= 40V
I = 0
0.50
100
1.0
mA
CEO
CE
B
= V
V
= 1.5V
µA
CE
(BR)CEO
BE
Collector – Emitter Cut-off Current
CEX
T = 150°C
mA
mA
C
I
I
Collector – Base Cut-off Current
Collector – Emitter Leakage
Current
V
V
= V
= V
I = 0
0.1
CBO
CB
(BR)CBO
(BR)CEO
E
CES
V
= 0
100
µA
CE
BE
V
*
Collector – Emitter Saturation
Voltage
CE(sat)
I = 1A
I = 0.1A
0.60
V
C
B
V
V
*
Base – Emitter Saturation Voltage I = 1A
I = 0.1A
1.3V
1.3V
V
V
BE(sat)
C
B
*
Base – Emitter Voltage
I = 1A
V
= 1V
CE
BE
C
V
V
V
= 1V
I = 50mA
40
20
10
CE
CE
CE
C
h
*
DC Current Gain
= 1V
= 1V
I = 500mA
175
—
FE
C
I = 1A
C
* Pulse Test: t = 300µs, δ = 2%.
p
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3933
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
相关型号:
2N4911LEADFREE
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
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