BCW68 [SECOS]
PNP Plastic-Encapsulate Transistors; PNP塑封装晶体管
| 型号： | BCW68 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | PNP Plastic-Encapsulate Transistors |
| 文件： | 总3页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW68
PNP Plastic-Encapsulate Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
FEATURES
L
3
3
Complementary to BCW66.
Top View
E
C B
COLLECTOR
3
1
1
2
2
K
D
1
H
G
J
MARKING:
F
BASE
BCW68F:DF
BCW68G:DG
BCW68H:DH
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
-
0.40
0.08
Max.
0.18
0.60
0.20
2
A
B
C
D
E
F
2.70
2.10
1.20
0.89
1.78
0.30
3.04
2.80
1.60
1.40
2.04
0.50
G
H
J
K
L
EMITTER
0.6 REF.
0.85
1.15
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
Collector-Base Voltage
-60
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
-45
-5
VEBO
V
Collector Current - Continuous
Collector Power Dissipation
Junction & Storage Temperature
IC
-0.8
A
PC
0.33
W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-60
-45
-5
V
V
V
μA
μA
IC=-10μA, IE=0
IC=-10mA, IB=0
IE=-10μA, IC=0
VCB=-45V, IE=0
VEB=-4V, IC=0
-0.02
-0.02
Collector Cut-off Current
IEBO
BCW68F
35
50
80
hFE1
hFE2
hFE3
hFE4
VCE=-10V, IC=-0.1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-2V, IC=-500mA
BCW68G
BCW68H
BCW68F
BCW68G
BCW68H
BCW68F
BCW68G
BCW68H
BCW68F
BCW68G
BCW68H
75
120
180
100
160
250
35
DC Current Gain
250
400
630
60
100
-0.3
-0.7
-1.25
-2
V
V
V
V
IC=-100mA, IB=-10mA
IC=-500mA, IB=-50mA
IC=-100mA, IB=-10mA
IC=-500mA, IB=-50mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Transition Frequency
Output Capacitance
fT
COB
200
6
MHz VCE=-5V, IC=-50mA,f=20MHz
pF
pF
VCB=-10V, IE=0,f=1MHz
VEB=-0.5V,IE=0,f=1MHz
Input Capacitance
CIB
60
27-Oct-2009 Rev. A
Page 1 of 3
BCW68
PNP Plastic-Encapsulate Transistors
Elektronische Bauelemente
CHARACTERISTIC CURVES
27-Oct-2009 Rev. A
Page 2 of 3
BCW68
PNP Plastic-Encapsulate Transistors
Elektronische Bauelemente
CHARACTERISTIC CURVES
27-Oct-2009 Rev. A
Page 3 of 3
相关型号：
BCW68F
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SST, 3 PIN
ROHM
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