2SC3415 [SECOS]
NPN Plastic-Encapsulated Transistor; NPN塑料封装晶体管
| 型号： | 2SC3415 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Plastic-Encapsulated Transistor |
| 文件： | 总1页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC3415
0.1A , 300V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
High Breakdown Voltage
Low Collector Output Capacitance
Ideal for Chroma Circuit
G
H
Emitter
Collector
Base
J
A
D
CLASSIFICATION OF hFE
Millimeter
B
REF.
Product-Rank
2SC3415-M
2SC3415-N
56~120
2SC3415-P
82~180
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
4.70
4.70
-
3.81
0.56
0.51
A
B
C
D
E
F
K
Range
39~82
E
C
F
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
2.66
0.76
K
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
VCEO
VEBO
IC
300
V
V
Collector to Emitter Voltage
300
Emitter to Base Voltage
5
0.1
V
Collector Current - Continuous
Collector Power Dissipation
A
PC
0.5
W
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
RθJA
TJ, TSTG
250
°C / W
°C
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max.
Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
300
-
-
-
-
V
V
IC=50μA, IE=0
300
IC=100μA, IB=0
IE=50μA, IC=0
5
-
-
-
V
-
0.5
0.5
180
2
μA
μA
VCB=200V, IE=0
VEB=4V, IC=0
IEBO
-
-
DC Current Gain
hFE
39
-
-
VCE=10V, IC=10mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCB=30V, IE=0, f=1MHz
Collector to Emitter Saturation Voltage
Base to Emitter voltage
VCE(sat)
VBE(sat)
Cob
-
V
V
-
-
1.2
-
Collector output capacitance
Transition Frequency
-
3
50
pF
fT
-
-
MHz VCE=30V, IC=10mA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Mar-2011 Rev. A
Page 1 of 1
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