2SC3415P [JCST]
Transistor;
| 型号： | 2SC3415P |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC3415 TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
z
High Breakdown Voltage
Low Collector Output Capacitance
Ideal for Chroma Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
300
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
5
V
Collector Current
0.1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
mW
℃/W
℃
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
300
300
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 50µA,IE=0
IC=100µA,IB=0
V
IE=50µA,IC=0
V
VCB=200V,IE=0
VEB=4V,IC=0
0.5
0.5
180
2
μA
μA
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=10V, IC=10mA
IC=50mA,IB=5mA
IC=50mA,IB=5mA
VCB=30V,IE=0, f=1MHz
VCE=30V,IC=10mA
39
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
VBE(sat)
Cob
V
V
1.2
3
pF
fT
50
MHz
CLASSIFICATION OF hFE
RANK
M
N
P
RANGE
39-82
56-120
82-180
A,Dec,2010
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