2SC3415/NP [ROHM]

Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92;
2SC3415/NP
型号: 2SC3415/NP
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

晶体 放大器 晶体管
文件: 总4页 (文件大小:79K)
中文:  中文翻译
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2SC4061K / 2SC3415S / 2SC4015  
Transistors  
Chroma amplifier transistor (300V, 0.1A)  
2SC4061K / 2SC3415S / 2SC4015  
zExternal dimensions (Unit : mm)  
zFeatures  
1) High breakdown voltage. (BVCEO=300V)  
2) Low collector output capacitance.  
(Typ. 3pF at VCB=30V)  
2SC4061K  
3) Ideal for chroma circuit.  
1.6  
2.8  
(1) Emitter  
(2) Base  
(3) Collector  
0.3Min.  
zAbsolute maximum ratings (Ta=25°C)  
ROHM : SMT3  
EIAJ : SC-59  
Each lead has same dimensions  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
300  
300  
5
Unit  
V
V
V
V
CBO  
CEO  
EBO  
V
V
2SC3415S  
4
2
I
C
100  
0.2  
mA  
2SC4061K  
Collector power  
dissipation  
2SC3415S  
2SC4015  
P
C
W
0.3  
1
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
0.45  
Tstg  
55 to +150  
Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.  
(1) Emitter  
(2) Collector  
(3) Base  
0.45  
2.5 0.5  
5
2
ROHM : SPT  
EIAJ : SC-72  
( )  
1
(
)
(
)
3
Taping specifications  
zPackaging specifications and hFE  
Type  
2SC4061K 2SC3415S 2SC4015  
Package  
SMT3  
NP  
SPT  
NP  
ATV  
NP  
hFE  
2SC4015  
2.5  
6.8  
Marking  
Code  
TV2  
AN  
T146  
3000  
TP  
Basic ordering unit (pieces)  
Denotes hFE  
5000  
2500  
0.65Max.  
0.5  
(1) Emitter  
(2) Collector  
(3) Base  
(
1
)
( ) ( )  
2 3  
2.54 2.54  
1.05  
0.45  
ROHM : ATV  
Taping specifications  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
300  
300  
5
100  
3
0.5  
0.5  
2
V
V
I
I
I
C
=
=
50µA  
100µA  
C
V
E
=
50µA  
I
CBO  
EBO  
CE(sat)  
FE  
56  
50  
µA  
µA  
V
V
V
CB  
=
200V  
Emitter cutoff current  
I
EB  
=
4V  
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C/I  
B
=
50mA/5mA  
h
180  
MHz  
pF  
V
V
V
CE/I  
C=10V/10mA  
Gain bandwidth product  
f
T
CE  
CB  
=
=
30V, I  
30V, I  
E
E
=10mA, f  
=30MHz  
Collector output capacitance  
Cob  
=
0A, f 1MHz  
=
Rev.A  
1/3  
2SC4061K / 2SC3415S / 2SC4015  
Transistors  
zElectrical characteristics curves  
100  
100  
80  
200  
Ta=25°C  
Ta=25°C  
V
CE=10V  
2.0mA  
1.8mA  
1.6mA  
2.0mA  
1.8mA  
100  
50  
1.4mA  
1.2mA  
1.6mA  
80  
1.4mA  
1.2mA  
20  
60  
60  
0.6mA  
10  
5
40  
40  
0.4mA  
0.4mA  
2
20  
20  
0
I
B
=0.2mA  
I
B
=0.2mA  
1
0
0.5  
0
2
4
6
8
10  
0
4
8
12  
16  
20  
200 400  
600  
800  
1000  
1200  
1400  
1600  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
BASE TO EMITTER VOLTAGE : VBE (mV)  
Fig.1 Ground emitter output  
Fig.2 Ground emitter output  
Fig.3 Ground emitter propagation  
characteristics  
characteristics ( Ι )  
characteristics ( ΙΙ )  
500  
2
500  
Ta=25°C  
Ta=25°C  
VCE=10V  
1
Ta=100°C  
200  
200  
100  
0.5  
V
CE=10V  
25°C  
100  
50  
50  
25°C  
IC/IB=10  
0.2  
0.1  
5V  
20  
10  
5
5
20  
10  
5
0.05  
0.02  
2
0.2  
0.2  
0.5  
1
2
5
10  
20  
50 100  
0.2  
0.5  
1
2
5
10  
20  
50 100  
0.5  
1
2
5
10  
20  
50 100  
COLLECTOR CURRENT : IC (mA)  
COLLECTOR CURRENT : I  
C
(mA)  
COLLECTOR CURRENT : IC (mA)  
Fig.6 Collector-emitter saturation voltage  
vs. collector current  
Fig.4 DC current gain  
vs. collector current ( Ι )  
Fig.5 DC current gain  
vs. collector current ( ΙΙ )  
2
1
20  
I
C
/I  
B
=10  
200  
100  
Ta=25°C  
Ta=25°C  
f=1MHz  
V
CE=30  
25°C  
IE=0A  
Ta=−25°C  
Ta=100°C  
10  
V
V
BE(sat)  
10V  
0.5  
100°C  
5
50  
0.2  
0.1  
25°C  
2
1
20  
10  
CE(sat)  
25°C  
0.05  
0.02  
0.5  
5
1  
0.2  
0.5  
1
2
5
10  
20  
50 100  
1
2
5
10  
20  
50  
100  
2  
5  
10  
20  
50  
100  
COLLECTOR CURRENT : IC (mA)  
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER CURRENT : I  
E
(mA)  
Fig.7 Collector-emitter saturation voltage  
Base-emitter saturation voltage  
vs. collector current  
Fig.9 Collector output capacitance  
vs. collector-base voltage  
Fig.8 Gain bandwidth product  
vs. emitter current  
Rev.A  
2/3  
2SC4061K / 2SC3415S / 2SC4015  
Transistors  
Ta=25°C  
single  
500m  
nonrepetitive  
pulse  
IC  
Max (Pulse)  
200m  
DC  
100m  
50m  
20m  
10m  
5m  
2m  
1m  
1
2
5
10 20  
50 100 200 500 1000  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.10 Safe operating area  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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