KSC5021 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | KSC5021 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC5021
DESCRIPTION
·With TO-220C package
·High voltage and high reliability
·High speed switching
·Wide area of safe operation
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
800
Open base
500
V
Open collector
7
V
5
10
A
ICM
Collector current-Peak
Base current
A
IB
2
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25ꢀ
50
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC5021
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
500
800
7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=5mA ;IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=1mA; IE=0
V
IE=1mA;IC=0
V
IC=3A ;IB=0.6A
IC=3A ;IB=0.6A
VCB=500V ;IE=0
VEB=5V; IC=0
1.0
1.5
10
V
V
µA
µA
IEBO
Emitter cut-off current
10
hFE-1
DC current gain
IC=0.6A ; VCE=5V
IC=3A ; VCE=5V
IC=0.6A ; VCE=10V
IE=0;f=1MHz ; VCB=10V
15
8
50
hFE-2
DC current gain
fT
Transition frequency
18
80
MHz
pF
Cob
Collector output capacitance
Switching times
ton Turn-on time
ts
0.5
3.0
0.3
µs
µs
µs
IC=5IB1=-2.5IB2=4A
VCC=200V;RL=50Ω
Storage time
Fall time
tf
ꢀ hFE-1 Classifications
R
O
Y
15-30
20-40
30-50
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC5021
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC5021
4
相关型号：
KSC5021-R
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
SAMSUNG
KSC5021-R
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5021FO
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
KSC5021FOTU
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
KSC5021FRTU
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
KSC5021FY
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
KSC5021FYTU
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明