KSC5021-R [FAIRCHILD]
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;
| 型号： | KSC5021-R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总7页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2008
KSC5021
NPN Silicon Transistor
•
•
•
High Voltage and High Reliability
High Speed Switching : tF = 0.1ms (Typ.)
Wide SOA
TO-220
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
800
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
500
7
V
5
A
ICP
10
A
IB
2
50
A
PC
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
W
°C
°C
TJ
150
TSTG
- 55 ~ 150
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
1
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
BVCBO
Parameter
Conditions
Min.
800
500
7
Typ.
Max Units
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
IC = 1mA, IE = 0
V
V
V
V
BVCEO
IC = 5mA, IB = 0
IE = 1mA, IC = 0
BVEBO
VCEX(sus)
IC = 2.5A, IB1 = -IB2 = 1A
L = 1mH, Clamped
500
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCB = 500V, IE = 0
VEB = 5V, IC = 0
10
10
50
mA
mA
hFE1
hFE2
VCE = 5V, IC = 0.6A
VCE = 5V, IC = 3A
15
8
VCE(sat)
VBE(sat)
Cob
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
IC = 3A, IB = 0.6A
1
V
V
IC = 3A, IB = 0.6A
1.5
VCB = 10V, IE = 0, f=1MHz
VCE = 10V, IC = 0.6A
80
18
pF
MHz
ms
fT
Current Gain Bandwidth Product
Turn On Time
tON
VCC = 200V
IC = 5IB1 = -2.5IB2 = 4A
RL = 50W
0.5
3
tSTG
tF
Storage Time
ms
Fall Time
0.3
ms
* Pulse Test: PW £ 300ms, Duty Cycle £ 2%
h
Classification
FE
Classification
hFE1
R
O
Y
15 ~ 30
20 ~ 40
30 ~ 50
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain (R-Grade)
100
5.0
4.5
VCE = 5V
Ta = 75 O
C
4.0
Ta = 125 O
C
IB = 300mA
3.5
3.0
2.5
Ta = - 25 O
C
Ta = 25 O
C
10
IB = 100mA
2.0
1.5
IB = 50mA
1.0
0.5
0.0
1
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. DC Current Gain (O-Grade)
Figure 4. Saturation Voltage (R-Grade)
10
100
IC = 4 IB
VCE = 5V
Ta = 75 O
C
Ta = 125 O
C
Ta = 125 O
C
1
Ta = - 25 O
C
Ta = 25 O
C
Ta = 75 O
C
10
Ta = - 25 O
Ta = 25 O
C
0.1
C
0.01
0.01
1
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CUTRRENT
Figure 5. Saturatin Voltage (O-Grade)
Figure 6. Saturation Voltage (R-Grade)
10
10
IC = 4 IB
IC = 4 IB
Ta = 125 O
C
Ta = 25 O
C
Ta = - 25 O
C
1
1
Ta = 125 O
C
Ta = 75 O
C
Ta = 75 O
C
Ta = - 25 O
Ta = 25 O
C
0.1
0.1
C
0.01
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
3
Typical Characteristics
1000
100
10
5
IB = 600mA
IB = 800mA
VCE = 5V
IB = 400mA
4
3
2
1
0
IB = 1A
IB = 1.2A
IB = 200mA
IB = 100mA
IB = 50mA
IB = 20mA
IB = 0
1
0.01
0.1
1
10
0
2
4
6
8
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
6
5
4
3
2
1
0
10
IC = 5 IB
VCE = 5V
VBE(sat)
1
0.1
VCE(sat)
0.01
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
10
tSTG
50ms
ICP(max)
IC(max)
1
1
tF
tON
0.1
0.1
0.01
0.01
0.1
1
10
100
1000
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
Figure 6. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
4
Typical Characteristics (Continued)
80
70
60
50
40
30
20
10
0
100
IB2 = -1A
L = 200mH
10
1
0.1
0.01
10
0
25
50
75
100
125
150
175
100
1000
10000
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
5
Package Dimension
Dimensions in Millimeters
www.fairchildsemi.com
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
6
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
KSC5021 Rev. A1
www.fairchildsemi.com
7
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