KSC5021R [ISC]

Transistor;
KSC5021R
型号: KSC5021R
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Transistor

局域网 开关 晶体管
文件: 总4页 (文件大小:87K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
KSC5021  
DESCRIPTION  
·
·With TO-220C package  
·High voltage and high reliability  
·High speed switching  
·Wide area of safe operation  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
800  
Open base  
500  
V
Open collector  
7
V
5
10  
A
ICM  
Collector current-Peak  
Base current  
A
IB  
2
A
PC  
Collector dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
Tj  
150  
-55~150  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
KSC5021  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
VBEsat  
ICBO  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
CONDITIONS  
IC=5mA ;IB=0  
MIN  
500  
800  
7
TYP.  
MAX  
UNIT  
V
IC=1mA; IE=0  
V
IE=1mA;IC=0  
V
IC=3A ;IB=0.6A  
IC=3A ;IB=0.6A  
VCB=500V ;IE=0  
VEB=5V; IC=0  
1.0  
1.5  
10  
V
V
μA  
μA  
IEBO  
Emitter cut-off current  
10  
hFE-1  
DC current gain  
IC=0.6A ; VCE=5V  
IC=3A ; VCE=5V  
IC=0.6A ; VCE=10V  
IE=0;f=1MHz ; VCB=10V  
15  
8
50  
hFE-2  
DC current gain  
fT  
Transition frequency  
18  
80  
MHz  
pF  
Cob  
Collector output capacitance  
Switching times  
ton Turn-on time  
ts  
0.5  
3.0  
0.3  
μs  
μs  
μs  
IC=5IB1=-2.5IB2=4A  
VCC=200V;RL=50Ω  
Storage time  
Fall time  
tf  
‹ hFE-1 Classifications  
R
O
Y
15-30  
20-40  
30-50  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
KSC5021  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)  
3
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
KSC5021  
4

相关型号:

KSC5021RJ69Z

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

KSC5021RTU

NPN Silicon Transistor
FAIRCHILD

KSC5021RTU

NPN Silicon Transistor
ONSEMI

KSC5021Y

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

KSC5021YJ69Z

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

KSC5022

NPN (HIGH VOLTAGE, HIGH QUALITY)
SAMSUNG

KSC5023

NPN (HIGH VOLTAGE, HIGH QUALITY)
SAMSUNG

KSC5024

NPN (HIGH VOLTAGE AND HIGH RELIABILITY)
SAMSUNG

KSC5024

High Voltage and High Reliabilty
FAIRCHILD

KSC5024-O

Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
SAMSUNG

KSC5024O

Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
FAIRCHILD

KSC5024OTU

Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
FAIRCHILD