KSC5021FR [JCST]
Transistor;
| 型号： | KSC5021FR |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TO – 220F
KSC5021F TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
z
High Speed Switching
High Voltage and High Reliability
Wide ASO
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
800
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
500
7
V
Collector Current
5
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
W
℃/W
℃
RθJA
Tj
62.5
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
800
500
7
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=1mA,IE=0
IC=5mA,IB=0
V
IE=1mA,IC=0
V
VCB=500V,IE=0
VEB=5V,IC=0
10
10
50
μA
μA
Emitter cut-off current
IEBO
hFE(1)
VCE=5V, IC=0.6A
VCE=5V, IC=3A
IC=3A,IB=0.6A
IC=3A,IB=0.6A
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=0.6A
15
8
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
VBE (sat)
Cob
1
V
V
1.5
80
15
pF
fT
MHz
CLASSIFICATION OF hFE (1)
RANK
R
O
Y
RANGE
15-30
20-40
30-50
A,Dec,2010
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