BD652 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BD652 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD646/648/650/652
DESCRIPTION
·With TO-220C package
·Complement to type BD645/647/649/651
·DARLINGTON
APPLICATIONS
·For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-80
UNIT
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
-100
-120
-140
-60
VCBO
Collector-base voltage
Open emitter
V
V
-80
VCEO
Collector-emitter voltage
Open base
-100
-120
-5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Open collector
V
A
-8
-12
A
-150
62.5
150
mA
W
ꢀ
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
Tstg
-65~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD646/648/650/652
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
BD646
BD648
BD650
BD652
-80
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-30mA, IB=0
V
-100
-120
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
IC=-3A ,IB=-12mA
IC=-5A ,IB=-50mA
IC=-5A ,IB=-50mA
IC=-3A ; VCE=-3V
-2.0
-2.5
-3.0
-2.5
V
V
V
V
VCB=-60V, IE=0
VCB=-40V, IE=0 ;TC=150ꢀ
-0.2
-2.0
BD646
VCB=-80V, IE=0
VCB=-50V, IE=0 ;TC=150ꢀ
-0.2
-2.0
BD648
Collector cut-off current
BD650
ICBO
mA
VCB=-100V, IE=0
VCB=-60V, IE=0 ;TC=150ꢀ
-0.2
-2.0
VCB=-120V, IE=0
VCB=-70V, IE=0 ;TC=150ꢀ
-0.2
-2.0
BD652
BD646
VCE=-30V, IB=0
VCE=-40V, IB=0
VCE=-50V, IB=0
VCE=-60V, IB=0
VEB=-5V; IC=0
IC=-3A ; VCE=-3V
BD648
Collector cut-off current
BD650
ICEO
-0.5
-5
mA
mA
BD652
Emitter cut-off current
DC current gain
IEBO
hFE
750
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
2.0
UNIT
ꢀ/W
Rth j-c
Thermal resistance junction to case
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD646/648/650/652
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
BD652-S
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
BOURNS
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