2SD1739 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1739 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1739
DESCRIPTION
·With TO-3PFa package
·Wide area of safe operation
·High voltage,high speed
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1500
700
7
UNIT
V
V
V
A
A
A
W
ꢀ
Open base
Open collector
6
ICM
Collector current-peak
Base current
18
IB
2.5
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
100
150
-55~150
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1739
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
8.0
UNIT
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Emitter-base breakdown voltage
IC=5A ;IB=1.2A
VBEsat
IC=5A ;IB=1.2A
IE=1mA ;IC=0
1.5
V
V(BR)EBO
7
V
VCB=750V; IE=0
10
1
µA
mA
µA
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
hFE
fT
Emitter cut-off current
DC current gain
VEB=5V; IC=0
10
30
IC=1A ; VCE=5V
IC=1A ; VCE=10V
6
Transition frequency
2
MHz
Switching times
tstg
Storage time
1.5
0.2
µs
µs
IC=5A; IB1=1A
IB2=-2A; VCC=200V
tf
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1739
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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