2SD1741Q [ETC]
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-221VAR ; 晶体管| BJT | NPN | 150V V（ BR ） CEO | 2A I（C ） | TO- 221VAR\n
| 型号： | 2SD1741Q |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-221VAR
|
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1741, 2SD1741A
Silicon NPN triple diffusion planar type
Unit: mm
7.0±0.3
3.0±0.2
3.5±0.2
For power amplification
For TV vertical deflection output
Complementary to 2SB1171 and 2SB1171A
1.1±0.1
0.85±0.1
0.4±0.1
Features
■
0.75±0.1
●
High forward current transfer ratio hFE which has satisfactory
linearity
2.3±0.2
●
Low collector to emitter saturation voltage VCE(sat)
4.6±0.4
●
I type package enabling direct soldering of the radiating fin to
1
2
3
1:Base
the printed circuit board, etc. of small electronic equipment.
2:Collector
3:Emitter
I Type Package
Absolute Maximum Ratings (T =25˚C)
■
C
Unit: mm
7.0±0.3
3.5±0.2
Parameter
Symbol
Ratings
Unit
2.0±0.2
3.0±0.2
0 to 0.15
Collector to
2SD1741
2SD1741A
2SD1741
200
VCBO
V
base voltage
Collector to
200
150
VCEO
V
emitter voltage 2SD1741A
Emitter to base voltage
Peak collector current
Collector current
180
2.5
VEBO
ICP
6
V
A
A
0.75±0.1
0.5 max.
0.9±0.1
1.1±0.1
0 to 0.15
3
1
2
3
IC
2
15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
Collector power TC=25°C
2.3±0.2
PC
W
4.6±0.4
dissipation
Ta=25°C
1.3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
Collector to base voltage
VCB = 200V, IE = 0
IEBO
VEB = 4V, IC = 0
50
VCBO
IC = 50µA, IE = 0
200
150
180
6
2SD1741
2SD1741A
Collector to emitter
voltage
VCEO
VEBO
IC = 5mA, IB = 0
V
V
Emitter to base voltage
IE = 500µA, IC = 0
*
hFE1
VCE = 10V, IC = 150mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 400mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 0.5A, f = 1MHz
60
240
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
50
1
1
V
V
Collector to emitter saturation voltage VCE(sat)
Transition frequency
fT
20
MHz
*hFE1 Rank classification
Rank
hFE1
Q
P
60 to 140
100 to 240
1
Power Transistors
2SD1741, 2SD1741A
PC — Ta
IC — VCE
IC — VBE
20
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
TC=25˚C
IB=7mA
VCE=10V
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
25˚C
1.0
0.8
0.6
0.4
0.2
0
TC=100˚C
6mA
5mA
–25˚C
15
10
5
(1)
4mA
3mA
2mA
1mA
(2)
0
0
20 40 60 80 100 120 140 160
0
4
8
12
16
20
24
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
10
10000
1000
IC/IB=10
VCE=10V
VCE=10V
f=1MHz
TC=25˚C
3000
300
100
3
1
1000
TC=100˚C
300
100
TC=100˚C
25˚C
30
10
0.3
0.1
25˚C
–25˚C
30
10
3
1
–25˚C
0.03
0.01
3
1
0.3
0.1
0.01
0.03
0.1
0.3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
(2)
ICP
3
1
IC
t=1ms
5ms
0.3
0.1
300ms
1
0.03
0.01
10–1
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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2001 MAR
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