2SD1742-P [KEXIN]
NPN Transistors;
| 型号： | 2SD1742-P |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：790K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1742
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
■ Features
● High forward current transfer ratio hFE which
has satisfactory linearity
0.127
max
+0.1
-0.1
0.80
● Low collector to emitter saturation voltage VCE(sat)
● Complementary to 2SB1172
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
60
60
6
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
Collector Current - Pulse
I
C
3
A
I
CP
5
Collector Power Dissipation
Tc=25°C
Ta=25°C
15
1.3
150
P
C
W
℃
Junction Temperature
TJ
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
60
60
6
Typ
Max
Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cutoff current
Collector-emitter cutoff current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 uA， I
Ic= 30 mA，I = 0
= 100 uA， I
E= 0
V
B
I
E
C= 0
I
CBO
CES
V
V
V
V
CB= 60 V , I
E= 0
0.1
200
300
0.1
1.2
1.2
1.8
250
mA
uA
I
CE = 60V, VBE = 0
CE = 30V, I = 0
EB= 6V , I =0
I
CEO
EBO
B
I
C
mA
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=3 A, I
B
=375 mA
=375 mA
V
V
C
=3 A, I
B
V
BE
V
V
V
CE= 4V, I
CE= 4V, I
CE= 4V, I
C= 3 A
C= 1 A
C= 3 A
70
10
DC current gain
hFE
Turn-ON Time
Storage Time
Fall Time
t
on
0.5
2.5
0.4
30
I
V
C
= 1A, IB1 = 0.1A, IB2 = – 0.1A,
us
t
stg
CC = 50V
t
f
Transition frequency
f
T
V
CE= 10V, I
C= 500mA,f=10MHz
MHz
■ Classification of hfe(1)
Type
2SD1742-Q
2SD1742-P
120-250
Range
70-150
1
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SMD Type
Transistors
NPN Transistors
2SD1742
■ Typical Characterisitics
PC — Ta
IC — VCE
IC — VBE
20
5
8
7
6
5
4
3
2
1
0
TC=25˚C
VCE=4V
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
4
25˚C
–25˚C
IB=100mA
15
10
5
TC=100˚C
90mA
80mA
(1)
70mA
3
60mA
50mA
40mA
2
1
0
30mA
20mA
10mA
(2)
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
10000
10000
IC/IB=8
VCE=4V
VCE=10V
f=10MHz
30
10
3000
3000
1000
TC=25˚C
1000
TC=100˚C
3
1
300
100
300
100
TC=100˚C
25˚C
25˚C
–25˚C
–25˚C
0.3
0.1
30
10
30
10
0.03
0.01
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
T
C=25˚C
30
10
(1)
(2)
ICP
t=10ms
1ms
3
1
IC
300ms
0.3
0.1
1
0.03
0.01
10–1
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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