2SD1742 [PANASONIC]
Silicon NPN triple diffusion planar type; 硅NPN三重扩散平面型
| 型号： | 2SD1742 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1742, 2SD1742A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
Unit: mm
7.0±0.3
3.0±0.2
3.5±0.2
Complementary to 2SB1172 and 2SB1172A
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
1.1±0.1
0.85±0.1
0.4±0.1
0.75±0.1
●
Low collector to emitter saturation voltage VCE(sat)
●
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
2.3±0.2
4.6±0.4
Absolute Maximum Ratings (T =25˚C)
■
C
1
2
3
1:Base
2:Collector
3:Emitter
I Type Package
Parameter
Symbol
Ratings
Unit
Collector to
2SD1742
2SD1742A
2SD1742
60
VCBO
V
base voltage
Collector to
80
Unit: mm
7.0±0.3
3.5±0.2
2.0±0.2
3.0±0.2
0 to 0.15
60
VCEO
V
emitter voltage 2SD1742A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
6
V
A
A
5
2.5
IC
3
15
0.75±0.1
0.5 max.
0.9±0.1
Collector power TC=25°C
1.1±0.1
0 to 0.15
PC
W
dissipation
Ta=25°C
1.3
1
2
3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1:Base
2:Collector
3:Emitter
Tstg
–55 to +150
2.3±0.2
4.6±0.4
I Type Package (Y)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICES
Conditions
min
typ
max
200
200
300
300
1
Unit
2SD1742
2SD1742A
2SD1742
2SD1742A
VCE = 60V, VBE = 0
µA
current
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
Collector cutoff
current
ICEO
IEBO
VCEO
µA
mA
V
Emitter cutoff current
Collector to emitter 2SD1742
voltage 2SD1742A
60
80
70
10
IC = 30mA, IB = 0
*
hFE1
VCE = 4V, IC = 1A
250
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
1.8
1.2
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
30
0.5
2.5
0.4
MHz
µs
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
µs
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
70 to 150
120 to 250
1
Power Transistors
2SD1742, 2SD1742A
PC — Ta
IC — VCE
IC — VBE
20
5
4
3
2
1
0
8
TC=25˚C
VCE=4V
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
7
6
25˚C
–25˚C
IB=100mA
15
10
5
TC=100˚C
90mA
80mA
70mA
60mA
50mA
(1)
5
4
3
2
1
0
40mA
30mA
20mA
10mA
(2)
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
10000
10000
IC/IB=8
VCE=4V
VCE=10V
f=10MHz
TC=25˚C
30
10
3000
3000
1000
1000
TC=100˚C
–25˚C
3
1
300
100
300
100
TC=100˚C
25˚C
25˚C
–25˚C
0.3
0.1
30
10
30
10
0.03
0.01
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
(2)
ICP
t=10ms
1ms
3
1
IC
300ms
0.3
0.1
1
0.03
0.01
10–1
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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PANASONIC
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