2SC5199 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC5199 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5199
DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1942
APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PL) and symbol
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
160
UNIT
V
Open emitter
Open base
160
V
Open collector
5
V
12
A
IB
Base current
1.2
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
120
W
ꢀ
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5199
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=50mA ;IB=0
160
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=8A; IB=0.8A
IC=6A ; VCE=5V
VCB=160V; IE=0
VEB=5V; IC=0
2.5
1.5
5
V
V
ICBO
µA
µA
IEBO
5
hFE-1
hFE-2
fT
IC=1A ; VCE=5V
IC=6A ; VCE=5V
IC=1A ; VCE=5V
f=1MHz;VCB=10V
55
35
160
DC current gain
Transition frequency
30
MHz
pF
COB
Collector output capacitance
170
ꢀ hFE-1 classifications
R
O
55-110
80-160
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5199
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5199
4
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