2SC5199-O [TOSHIBA]
TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power;
| 型号： | 2SC5199-O |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power 晶体 放大器 晶体管 功率双极晶体管 功率放大器 |
| 文件： | 总4页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5199
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5199
Power Amplifier Applications
Unit: mm
•
•
•
High breakdown voltage: V
= 160 V (min)
CEO
Complementary to 2SA1942
Suitable for use in 80-W high fidelity audio amplifier’s output stage.
Maximum Ratings
(Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
160
160
5
V
V
V
A
A
CBO
CEO
EBO
I
12
C
Base current
I
B
1.2
Collector power dissipation
(Tc = 25°C)
P
120
W
C
Junction temperature
Storage temperature range
T
150
°C
°C
JEDEC
JEITA
―
―
j
T
stg
−55 to 150
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Electrical Characteristics
(Tc = 25°C)
Characteristics
Symbol
Test Condition
= 160 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
―
―
―
―
―
5.0
5.0
―
µA
µA
V
CBO
CB
E
Emitter cut-off current
= 5 V, I = 0
C
EBO
EB
Collector-emitter breakdown voltage
V
I
C
= 50 mA, I = 0
160
(BR) CEO
B
h
FE (1)
V
CE
= 5 V, I = 1 A
55
―
160
C
DC current gain
(Note)
h
V
= 5 V, I = 6 A
35
―
―
―
―
74
0.35
1.0
30
―
2.5
1.5
―
FE (2)
CE
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
C
= 8 A, I = 0.8 A
V
V
CE (sat)
B
V
BE
V
CE
V
CE
V
CB
= 5 V, I = 6 A
C
Transition frequency
f
= 5 V, I = 1 A
MHz
pF
T
C
Collector output capacitance
C
ob
= 10 V, I = 0, f = 1 MHz
170
―
E
Note: h
FE (1)
classification R: 55 to 110, O: 80 to 160
1
2004-07-07
2SC5199
Marking
Part No. (or abbreviation code)
Lot No.
TOSHIBA
2SC5199
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-07
2SC5199
I
– V
I – V
C BE
C
CE
10
8
10
8
250
200
Common emitter
Tc = 25°C
150
100
6
6
50
40
Tc = 100°C
25°C
4
4
30
−25°C
20
2
2
Common emitter
V
CE
= 5 V
I
B
= 10 mA
0
0
0
0
2
4
6
8
10
0.4
0.8
1.2
1.6
2.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
BE
(V)
CE
V
– I
h – I
FE C
CE (sat)
C
10
1
1000
100
10
Tc = 100°C
Tc = 25°C
Tc = 100°C
Tc = 25°C
Tc = −25°C
0.1
Tc = −25°C
Common emitter
/I = 10
I
C
B
0.01
0.01
0.1
1
10
(A)
100
Collector current
I
Common emitter
= 5 V
C
V
CE
1
0.01
0.1
Collector current
1
10
I
(A)
C
Safe Operating Area
30
10
I
max (pulsed)*
C
1 ms*
10 ms*
I
C
max (continuous)
5
3
DC operation
Tc = 25°C
100 ms*
1
0.5
0.3
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
V
CEO
max
100
0.05
2
3
10
30
300
Collector-emitter voltage
V
(V)
CE
3
2004-07-07
2SC5199
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-07-07
相关型号：
2SC5199-R
TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power
TOSHIBA
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