2SC5200 [THINKISEMI]

150 Watt Silicon NPN Power Transistors; 150瓦的硅NPN功率晶体管
2SC5200
型号: 2SC5200
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

150 Watt Silicon NPN Power Transistors
150瓦的硅NPN功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:424K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC5200  
®
2SC5200  
Pb Free Plating Product  
150 Watt Silicon NPN Power Transistors  
DESCRIPTION  
·With TO-3PL package  
·Complement to type 2SA1943  
APPLICATIONS  
Collector  
·High current switching  
·Recommended for 100W high fidelity audio  
frequency amplifier output stage  
Base  
Emitter  
PINNING  
PIN  
1
DESCRIPTION  
E
C
B
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PL) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
MAX  
UNIT  
V
230  
230  
5
V
Open base  
V
Open collector  
15  
A
IB  
Base current  
1.5  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
150  
W
Tj  
150  
Tstg  
-55~150  
Page 1/2  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
2SC5200  
®
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
VCEsat  
VBE  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
Collector-emitter breakdown voltage IC=50mA ;IB=0  
230  
Collector-emitter saturation voltage  
Base-emitter voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=8A ;IB=0.8A  
IC=7A ; VCE=5V  
VCB=230V; IE=0  
VEB=5V; IC=0  
3.0  
1.5  
5
V
V
ICBO  
µA  
µA  
IEBO  
5
hFE-1  
hFE-2  
fT  
IC=1A ; VCE=5V  
IC=7A ; VCE=5V  
IC=1A ; VCE=5V  
f=1MHz;VCB=10V  
55  
35  
160  
DC current gain  
Transition frequency  
30  
MHz  
pF  
COB  
Collector output capacitance  
200  
hFE-1 classifications  
R
O
55-100  
80-160  
Mechanical Dimensions  
TO-3PL  
Q
M
M
0.25 (0.010)  
T B  
−T−  
NOTES:  
−B−  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
C
E
U
MILLIMETERS  
INCHES  
N
DIM  
A
B
C
D
E
MIN  
28.0  
19.3  
4.7  
0.93  
1.9  
MAX  
29.0  
20.3  
5.3  
1.48  
2.1  
MIN  
MAX  
1.142  
0.800  
0.209  
0.058  
0.083  
0.102  
1.102  
0.760  
0.185  
0.037  
0.075  
0.087  
A
L
1
2
3
R
F
2.2  
2.4  
G
H
J
K
L
N
P
Q
R
U
W
5.45 BSC  
0.215 BSC  
2.6  
0.43  
17.6  
3.0  
0.78  
18.8  
0.102  
0.017  
0.693  
0.118  
0.031  
0.740  
P
K
11.2 REF  
4.35 REF  
0.411 REF  
0.172 REF  
2.2  
3.1  
2.6  
3.5  
0.087  
0.122  
0.102  
0.137  
W
F 2 PL  
2.25 REF  
6.3 REF  
0.089 REF  
0.248 REF  
0.110 0.125  
G
J
H
2.8  
3.2  
D 3 PL  
STYLE 2:  
M
S
T B  
0.25 (0.010)  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
Page 2/2  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  

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