2SB761A [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB761A |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB761 2SB761A
DESCRIPTION
·With TO-220C package
·Complement to type 2SD856/856A
·Low collector saturation voltage
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Tc=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
-60
UNIT
2SB761
2SB761A
2SB761
2SB761A
VCBO
Collector-base voltage
Open emitter
V
-80
-60
VCEO
Collector-emitter voltage
Open base
V
-80
VEBO
IC
Emitter-base voltage
Collector current
Open collector
-5
V
A
A
W
ꢀ
-3
ICM
PC
Tj
Collector current-peak
Collectorl power dissipation
Junction temperature
Storage temperature
-5
TC=25ꢀ
35
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB761 2SB761A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
2SB761
Collector-emitter
breakdown voltage
VCEO
IC=-30mA; IB=0
V
2SB761A
VCEsat
VBE
Collector-emitter saturation voltage IC=-3 A;IB=-0.375 A
-1.2
-1.8
V
V
Base-emitter on voltage
IC=-3A ; VCE=-4V
VCE=-60V; VBE=0
VCE=-80V; VBE=0
VCE=-60V; IB=0
VEB=-5V; IC=0
2SB761
Collector
cut-off current
ICES
-200
µA
2SB761A
ICEO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
-300
-1
µA
mA
IC=-1A ; VCE=-4V
IC=-3A ; VCE=-4V
40
10
250
DC current gain
Switching times
ton Turn-on time
toff Turn-off time
0.5
2.0
µs
µs
IC=-1A ; IB1=-IB2=-0.1 A
ꢀ hFE-1 classifications
R
Q
P
40-90
70-150
120-250
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB761 2SB761A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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