2SB762 [JMNIC]
2SB762A;
| 型号： | 2SB762 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | 2SB762A |
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB762 2SB762A
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SD857/857A
·Low collector saturation voltage
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
-60
UNIT
2SB762
2SB762A
2SB762
2SB762A
VCBO
Collector-base voltage
Open emitter
V
-80
-60
VCEO
Collector-emitter voltage
Open base
V
-80
VEBO
IC
Emitter-base voltage
Collector current
Open collector
-5
V
A
-4
ICM
PC
Tj
Collector current-peak
Collectorl power dissipation
Junction temperature
Storage temperature
-8
A
TC=25℃
40
W
℃
℃
150
-55~150
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SB762 2SB762A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
2SB762
Collector-emitter
breakdown voltage
VCEO
IC=-30mA; IB=0
V
2SB762A
VCEsat
VBE
Collector-emitter saturation voltage IC=-4A;IB=-0.4 A
-1.5
-2.0
V
V
Base-emitter on voltage
IC=-3A ; VCE=-4V
VCE=-60V; VBE=0
VCE=-80V; VBE=0
VCE=-30V; IB=0
VCE=-60V; IB=0
VEB=-5V; IC=0
2SB762
2SB762A
2SB762
2SB762A
Collector
cut-off current
ICES
-400
-700
μA
Collector
cut-off current
ICEO
μA
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
-7
mA
IC=-1A ; VCE=-4V
IC=-3A ; VCE=-4V
40
15
250
DC current gain
Switching times
ton Turn-on time
toff Turn-off time
0.3
1.3
μs
μs
IC=-4A ; IB1=-IB2=-0.4 A
hFE-1 classifications
R
Q
P
40-90
70-150
120-250
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB762 2SB762A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
相关型号：
2SB764-E
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MP, 3 PIN
ONSEMI
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