2SB763 [ISC]
Silicon PNP Power Transistor; 硅PNP功率晶体管
| 型号： | 2SB763 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB763
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Good Linearity of hFE
·High Collector Power Dissipation
·Complement to Type 2SD858
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emtter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
-60
-60
V
-5
V
Collector Current-Continuous
Collector Current-Peak
-5
A
ICM
-10
A
Collector Power Dissipation
@ TC=25℃
PC
60
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB763
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= -30mA; IB= 0
-60
V
IC= -5A; IB= -0.5A
IC= -3A; VCE= -4V
VCE= -30V; IB= 0
VCE= -60V; VBE= 0
VEB= -5V; IC= 0
-1.5
-1.6
-700
-400
-1
V
VCE
(sat)
V
VBE(
)
on
ICEO
μA
μA
mA
ICES
IEBO
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
C= -3A; VCE= -4V
40
20
250
hFE-2
DC Current Gain
Switching Times
Turn-On Time
0.2
1.4
μs
μs
ton
IC= -6A; IB1= -IB2= -0.6A
Turn-Off Time
toff
hFE-1 Classifications
R
Q
P
40-90
70-150
120-250
2
isc Website：www.iscsemi.cn
相关型号：
2SB764-E
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MP, 3 PIN
ONSEMI
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