2SA1180 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1180 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1180
DESCRIPTION
·With TO-3 package
·High power dissipations
APPLICATIONS
·For power switching amplifier and
general purpose applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-180
-180
-6
UNIT
V
Open emitter
Open base
V
Open collector
V
-10
A
IB
Base current
-4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
100
W
ꢀ
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1180
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
PARAMETER
CONDITIONS
MIN
-180
-180
-6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA ;IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-1mA ;IE=0
V
IE=-1mA ;IC=0
V
IC=-5A; IB=-0.5A
IC=-5A; IB=-0.5A
VCB=-180V; IE=0
VEB=-6V; IC=0
-2.0
-2.5
-0.1
-0.1
V
V
ICBO
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-5A ; VCE=-4V
30
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1180
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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