2SA1182-Y [KEXIN]
PNP Transistors;
| 型号： | 2SA1182-Y |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：940K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SA1182
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Collector Current Capability IC=-0.5A
1
2
● Collector Emitter Voltage VCEO=-32V
● Complementary to 2SC2859.
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-40
Unit
V
VCBO
VCEO
VEBO
-32
-5
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
I
I
C
B
-500
-50
mA
mW
℃
P
C
150
125
T
J
Storage Temperature range
Tstg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA， I =0
Ic= -1 mA， I =0
= -100μA， I
Min
-40
-32
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
=0
I
CBO
EBO
V
V
CB= -40 V , I
E
=0
-0.1
-0.1
uA
V
I
EB= -5V , IC=0
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-100 mA, I
B
B
=-10mA
=-10mA
-0.1 -0.25
-1.2
V
C=-100 mA, I
V
BE
V
V
V
V
V
CE=-1V, C
I
-0.8
-1
=-100 mA
h
FE(1)
FE(2)
CE= -1V, I
CE=- 6V, I
CB= -6V, I
CE= -6V, I
C
= -100mA
70
25
400
DC current gain
h
C
= -400mA *1
Collector output capacitance
Transition frequency
C
ob
E
= 0,f=1MHz
= -20mA
13
pF
fT
C
200
MHz
*1: h
classification O: 25 (min), Y: 40 (min), GR: 70 (min)
FE (2)
■ Classification of hfe(1)
Type
Range
Marking
2SA1182-O
70-140
ZO
2SA1182-Y
120-240
ZY
2SA1182-G
200-400
ZG
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SA1182
■ Typical Characterisitics
2
www.kexin.com.cn
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