2SA1182 [TYSEMI]
SOT-23 package Collector-base voltage VCBO -35 V; SOT- 23封装集电极 - 基极电压VCBO -35 V
| 型号： | 2SA1182 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | SOT-23 package Collector-base voltage VCBO -35 V |
| 文件： | 总2页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SA1182
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
SOT-23 package
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-35
Unit
V
-30
V
-5
V
-500
-50
mA
mA
mW
Base current
IB
Collector power dissipation
Junction temperature
Storage temperature range
PC
150
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Symbol
Testconditons
Min
Typ
Max
-0.1
-0.1
240
Unit
A
ICBO
IEBO
VCB = -35 V, IE = 0
VEB = -5 V, IC = 0
A
VCE = -1 V, IC = -100 mA
VCE = -6 V, IC = -400 mA
70
25
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter voltage
VCE (sat) IC = -100 mA, IB = -10 mA
-0.1 -0.25
V
V
VBE
Cob
fT
VCE = -1 V, IC = -100 mA
VCB = -6 V, IE = 0, f = 1 MHz
VCE = -6 V, IC = -20 mA
-0.8
13
-1.0
Collector output capacitance
Transition frequency
pF
200
MHz
hFE Classification
Marking
Rank
ZO
O
ZY
Y
hFE
70 140
120 240
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Product specification
2SA1182
Typical Characteristics
Fig.2 Collector Current
Fig. 1 Collector Emitter Voltage
Fig.3 Collector Current
Fig.4 Ambient Temperature
Fig.5 Base Emitter Voltage
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