2N5428 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N5428
型号: 2N5428
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 局域网
文件: 总4页 (文件大小:147K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5428 2N5430  
DESCRIPTION  
·With TO-66 package  
·Low collector saturation voltage  
: VCE(sat)=1.2V(Max)@IC=7A  
·Excellent safe operating areas  
APPLICATIONS  
·Designed for switching and wide-band  
amplifier applications  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N5428  
2N5430  
2N5428  
2N5430  
80  
100  
80  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
100  
6
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
W
7
IB  
Base current  
1
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
40  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction to case  
4.37  
/W  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5428 2N5430  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
80  
TYP.  
MAX  
UNIT  
2N5428  
2N5430  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=50mA ; IB=0  
V
100  
VCEsat-1  
VCEsat-2  
VBEsat-1  
VBEsat-2  
Collector-emitter saturation voltage IC=2A ;IB=0.2A  
Collector-emitter saturation voltage IC=7A I;B=0.7A  
0.7  
1.2  
1.2  
2.0  
V
V
V
V
Base-emitter saturation voltage  
Base-emitter saturation voltage  
IC=2A ;IB=0.2A  
IC=7A I;B=0.7A  
VCE=75V;VBE(off)=1.5V  
TC=150ꢀ  
0.1  
1.0  
2N5428  
2N5430  
ICEX  
Collector cut-off current  
mA  
VCE=90V;VBE(off)=1.5V  
0.1  
1.0  
TC=150ꢀ  
ICBO  
IEBO  
hFE-1  
hFE-2  
hFE-3  
fT  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
VCB=Rated VCBO;IE=0  
0.1  
0.1  
mA  
mA  
VEB=6V; IC=0  
IC=0.5A ; VCE=2V  
IC=2A ; VCE=2V  
60  
60  
40  
20  
DC current gain  
240  
DC current gain  
IC=5A ; VCE=2V  
Transition frequency  
IC=0.5A ; VCE=10V;f=10MHz  
MHz  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5428 2N5430  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5428 2N5430  
4

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