2N5429 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2N5429 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N5429
DESCRIPTION
·Contunuous Collector Current-IC= 7A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 7A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching and wide-band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
VALUE
UNIT
V
Collector-Base Voltage
100
Collector-Emitter Voltage
Emitter-Base Voltage
100
V
6
V
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
7
1
A
IB
A
PC
40
W
℃
℃
TJ
200
-65~200
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
4.37
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N5429
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
100
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 2A; IB= 0.2A
IC= 7A; IB= 0.7A
IC= 2A; IB= 0.2A
IC= 7A; IB= 0.7A
VCB= 100V; IE= 0
0.7
1.2
1.2
2.0
0.1
V
-1
-2
-1
-2
(sat)
(sat)
(sat)
(sat)
V
VCE
VBE
VBE
V
V
ICBO
mA
mA
mA
VCE= 90V; VBE(off)= -1.5V
VCE= 90V; VBE(off)= -1.5V,TC=150℃
0.1
1.0
ICEX
IEBO
hFE-1
hFE-2
hFE-3
fT
Collector Cutoff Current
Emitter Cutoff Current
VEB= 6V; IC= 0
0.1
DC Current Gain
IC= 0.5A ; VCE= 2V
IC= 2A; VCE= 2V
30
30
20
20
DC Current Gain
120
DC Current Gain
IC= 5A; VCE= 2V
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f=10MHz
MHz
2
isc Website：www.iscsemi.cn
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