2N5430 [SEME-LAB]

MEDIUM POWER NPN SILICON TRANSISTOR; 中功率NPN硅晶体管


型号：	2N5430
厂家：	SEME LAB
描述：	MEDIUM POWER NPN SILICON TRANSISTOR 中功率NPN硅晶体管晶体晶体管局域网
文件：	总2页 (文件大小：19K)
中文：	中文翻译
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2N5430

S E M E

LA B

MECHANICAL DATA

Dimensions in mm (inches)

MEDIUM POWER

NPN SILICON TRANSISTOR

6.35 (0.250)

8.64 (0.340)

3.68

(0.145) rad.

max.

3.61 (0.142)

3.86 (0.145)

rad.

Designed for switching and wide - band

amplifier applications

This product is available screened in

accordance with various military specs.

EG. 2N5430CECC–QR–B

Built and screened in accordance with

CECC procedures.

1.27 (0.050)

1.91 (0.750)

4.83 (0.190)

5.33 (0.210)

9.14 (0.360)

min.

Screened to sequence B.

TO66 Package.

Base

Pin 1

Pin 2

Case

Emitter

Collector

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

V_CEO

V_CBO

V_EBO

I_C

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

100 V

6 V

Collector Current – Continuous

Base Current

7 A

I_B

1 A

P_D

Total Device Dissipation at T_case= 25°C

Derate above 25°C

40 W

228 mW / °C

T_j

Operating and

–65 to 200°C

4.37 °C / W

T_stg

Storage Junction Temperature Range

Thermal Resistance, Junction to Case.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 1/94

2N5430

S E M E

LA B

OFF CHARACTERISTICS

Parameter

Test Conditions

Min

Max

Unit

Collector – Emitter

Sustaining Voltage

Collector Cutoff Current

CEO (sus)

I = 50mA , I = 0

100

= 90V , I = 0

100

CBO

= 90V , V

= 1.5V

EB(off)

Collector Cutoff Current

CEX

= 90V , V

= 1.5V , T = 150°C

1.0

Collector Cutoff Current

Emitter Cutoff Current

= Rated V , I = 0

CB E

CBO

= 6V , I = 0

100

EBO

ON CHARACTERISTICS

Parameter

Test Conditions

Min

Max

Unit

I = 500mA , V = 2V

DC Current Gain

I = 2A , V = 2V

240

—

I = 5A , V = 2V

Collector – Emitter

Saturation Voltage

Base – Emitter

I = 2A , I = 0.2A

0.7

1.2

2.0

CE(sat)

I = 7A , I = 0.7A

I = 2A , I = 0.2A

BE(sat)

Saturation Voltage

I = 7A , I = 0.7A

C B

DYNAMIC CHARACTERISTICS

Parameter

Test Conditions

Min

Max

Unit

Current Gain

I = 500 mA, V = 10V, f = 10 MHz

MHz

Bandwidth Product

Output Capacitance

Input Capacitance

= 10V, I = 0, f = 100 kHz

250

= 2V, I = 0, f = 100 kHz

1000

SWITCHING CHARACTERISTICS

Parameter

Test Conditions

Min

Max

Unit

Delay Time

Rise Time

Storage Time

Fall Time

= 40V, V

= 3V

100

EB(off)

I = 2A, I = 200mA

100

2.0

= 40V, I = 2A

= I = 200mA

200

* Pulse Test: Pulse width = 300 s, Duty Cycle = 2.0 %

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Prelim. 1/94

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

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