ENA1233A [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | ENA1233A |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总7页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1233A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4196LS
Features
•
•
ON-resistance R (on)=1.2 (typ.)
10V drive
Input capacitance Ciss=360pF
Ω
DS
•
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
500
±30
5.5
5.0
21
DSS
V
V
GSS
*1
I
Limited only by maximum temperature Tch=150 C
A
°
Dc
Drain Current (DC)
I
*2
Tc=25 C (SANYO’s ideal heat dissipation condition)*3
A
°
Dpack
Drain Current (Pulse)
Allowable Power Dissipation
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
2.0
30
W
W
P
D
Tc=25 C (SANYO’s ideal heat dissipation condition)*3
°
Channel Temperature
Tch
150
C
C
°
Storage Temperature
Tstg
--55 to +150
°
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
E
83
mJ
A
AS
I
AV
5.5
Note : 1 Shows chip capability
*
2 Package limited
*
3 SANYO’s condition is radiation from backside.
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
4 V =50V, L=5mH, I =5.5A (Fig.1)
*
DD
AV
5 L 5mH, single pulse
*
≤
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: TO-220F-3FS
7528-001
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
2SK4196LS-1E
2.54
Marking
Electrical Connection
2
K4196
1
LOT No.
2.76
1.47 MAX
0.8
3
1
2
3
0.5
1 : Gate
2 : Drain
3 : Source
2.54
2.54
SANYO : TO-220F-3FS
http://www.sanyosemi.com/en/network/
91212 TKIM TC-00002811/O2208QB MSIM TC-00001651 No. A1233-1/7
2SK4196LS
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
500
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
V
μA
nA
V
(BR)DSS
D GS
I
I
V
V
V
V
=400V, V =0V
GS
100
DSS
DS
GS
DS
DS
=±30V, V =0V
DS
±100
5
GSS
V
(off)
GS
=10V, I =1mA
3
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
| yfs |
(on)
=10V, I =2.8A
1.3
2.5
S
D
R
I
=2.8A, V =10V
D GS
1.2
360
77
1.56
Ω
DS
Ciss
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
V
=30V, f=1MHz
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
17
t
t
t
t
(on)
13
d
r
Rise Time
32
See Fig.2
Turn-OFF Delay Time
(off)
39
d
f
Fall Time
18
Total Gate Charge
Qg
14.6
3.2
8.8
0.9
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=200V, V =10V, I =5.5A
GS
DS
D
V
I =5.5A, V =0V
GS
1.2
SD
S
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
PW=10μs
D.C.≤0.5%
V
=200V
DD
L
I
=2.8A
D
V
=10V
≥50Ω
R =71Ω
GS
L
RG
D
V
OUT
2SK4196LS
G
10V
0V
V
50Ω
DD
2SK4196LS
P.G
S
R
=50Ω
GS
Ordering Information
Device
Package
Shipping
50pcs./magazine
memo
Pb Free
2SK4196LS-1E
TO-220F-3FS
No. A1233-2/7
2SK4196LS
I
D
-- V
I
-- V
DS
D
GS
16
14
12
10
8
16
Tc=25°C
V
=20V
DS
14
12
10
8
8V
6V
6
6
4
4
2
0
2
0
V
=5V
GS
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
-- V
IT14089
Gate-to-Source Voltage, V -- V
GS
IT14090
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
=2.8A
D
Tc=75°C
25°C
--25°C
0.5
0
0.5
0
5
6
7
8
9
10
11
12
13
14
15
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
IT14091
Case Temperature, Tc -- °C
IT14092
GS
| yfs | -- I
I
S
-- V
D
SD
7
5
3
2
V
=10V
V
=0V
DS
GS
10
7
5
3
2
3
2
1.0
7
5
1.0
7
5
3
2
0.1
7
5
3
2
3
2
0.1
0.1
0.01
0.2
2
3
5
7
2
3
5
7
0.4
0.6
0.8
1.0
1.2
1.4
IT14094
1.0
10
Drain Current, I -- A
IT14093
Diode Forward Voltage, V
SD
-- V
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
5
2
V
=200V
=10V
f=1MHz
DD
V
3
2
GS
1000
7
5
Ciss
3
2
100
7
5
100
7
5
3
2
t
3
2
f
t (on)
d
10
10
7
0.1
7
0
10
20
30
40
50
IT14096
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I -- A
IT14095
Drain-to-Source Voltage, V
DS
-- V
D
No. A1233-3/7
2SK4196LS
V
-- Qg
A S O
GS
5
10
9
V
I
=200V
DS
D
I
=21A(PW≤10μs)
3
2
DP
=5.5A
10
7
5
8
I
(*1)=5.5A
Dc
7
I
(*2)=5A
Dpack
3
2
6
1.0
7
5
5
Operation in
this area is
3
2
4
3
limited by R (on).
DS
0.1
7
5
2
3
2
*1. Shows chip capability
*2. SANYO's ideal heat dissipation condition
1
0
Tc=25°C
Single pulse
0.01
1.0
0
0
0
2
4
6
8
10
12
14
16
2
3
5
7
2
3
5
7
2
3
5
7
10
100
IT14097
Drain-to-Source Voltage, V
DS
-- V
IT16937
Total Gate Charge, Qg -- nC
P
-- Ta
P
-- Tc
D
D
35
30
25
20
15
10
2.5
2.0
1.5
1.0
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13767
IT13770
Case Temperature, Tc -- °C
E
-- Ta
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A1233-4/7
2SK4196LS
Magazine Specification
2SK4196LS-1E
No. A1233-5/7
2SK4196LS
Outline Drawing
2SK4196LS-1E
Mass (g) Unit
1.8
mm
* For reference
No. A1233-6/7
2SK4196LS
Note on usage : Since the 2SK4196LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1233-7/7
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