ENA1243B [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用型号: | ENA1243B |
厂家: | SANYO SEMICON DEVICE |
描述: | General-Purpose Switching Device Applications |
文件: | 总7页 (文件大小:516K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1243B
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH6444
Features
•
Low ON-resistance
•
4V drive
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
60
±20
4.5
18
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (900mm2 0.8mm)
1.6
150
W
°C
°C
×
D
Tch
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: CPH6
7018A-003
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.15
0.05
CPH6444-TL-E
6
5
4
3
Packing Type: TL
Marking
TL
1
2
0.95
1 : Drain
2 : Drain
3 : Gate
0.4
Electrical Connection
4 : Source
5 : Drain
6 : Drain
1, 2, 5, 6
SANYO : CPH6
3
4
http://semicon.sanyo.com/en/network
62712 TKIM/22509 MSIM/61808PE TIIM TC-00001431
No. A1243-1/7
CPH6444
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
60
V
μA
μA
V
(BR)DSS
D
GS
=60V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
2.6
GSS
V
(off)
GS
=10V, I =1mA
1.2
1.8
D
Forward Transfer Admittance
| yfs |
=10V, I =2A
3
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=2A, V =10V
GS
60
74
78
104
114
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=1A, V =4.5V
GS
=1A, V =4V
GS
81
Input Capacitance
Ciss
505
57
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
DS
37
t
t
t
t
(on)
7.3
9.8
40
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
24
ns
Total Gate Charge
Qg
10
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=30V, V =10V, I =4.5A
GS
1.6
2.1
0.83
DS
D
V
SD
I =4.5A, V =0V
S GS
1.2
Switching Time Test Circuit
V
=30V
V
DD
IN
10V
0V
I
=2A
D
V
IN
R =15Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
CPH6444
P.G
50Ω
S
Ordering Information
Device
Package
CPH6
Shipping
3,000pcs./reel
memo
CPH6444-TL-E
Pb Free
No. A1243-2/7
CPH6444
I
D
-- V
I
-- V
GS
DS
D
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
DS
=10V
V
=2.5V
GS
0.5
0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT13789
IT13790
DS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
160
150
140
130
120
110
100
90
170
160
150
140
130
120
110
100
90
Ta=25°C
I
=1A
D
2A
80
80
70
70
60
60
50
50
40
40
30
30
20
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT13791
Ambient Temperature, Ta -- °C
IT13792
GS
| yfs | -- I
I
-- V
S SD
D
10
7
5
V
=10V
V
=0V
GS
7
5
DS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
7
0.01
0.2
2
3
5
7
2
3
5
7
2
3
5 7
10
0.4
0.6
0.8
1.0
1.2
IT13794
0.01
0.1
1.0
Drain Current, I -- A
IT13793
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
7
5
f=1MHz
V
V
=30V
=10V
DD
GS
7
5
3
2
3
2
t
f
100
10
7
5
t (on)
d
7
5
3
2
3
2
0.1
10
2
3
5
7
2
3
5
7
0
10
20
30
40
50
60
IT13796
1.0
Drain Current, I -- A
IT13795
Drain-to-Source Voltage, V -- V
DS
D
No. A1243-3/7
CPH6444
V
-- Qg
A S O
GS
10
9
5
V
I
=30V
DS
=4.5A
3
2
I
=18A
PW≤10μs
DP
D
10
8
7
I
=4.5A
D
5
7
3
2
6
1.0
7
5
5
Operation in this area
3
2
4
is limited by R (on).
DS
3
0.1
7
5
2
Ta=25°C
3
2
1
0
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
1
2
3
4
5
6
7
8
9
10
1.0
10
100
IT13798
Total Gate Charge, Qg -- nC
IT13797
Drain-to-Source Voltage, V
DS
-- V
P
-- Ta
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2✕0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13788
No. A1243-4/7
CPH6444
Embossed Taping Specification
CPH6444-TL-E
No. A1243-5/7
CPH6444
Outline Drawing
Land Pattern Example
CPH6444-TL-E
Mass (g) Unit
Unit: mm
0.015
mm
* For reference
0.6
0.95
0.95
No. A1243-6/7
CPH6444
Note on usage : Since the CPH6444 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
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prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
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mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1243-7/7
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